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Host Excitation and Luminescence in Large Band Gap Oxides

Published online by Cambridge University Press:  10 February 2011

P.C. Schmidt ,
J. Sticht ,
V. Eyert  and
K.C. Mishra
P.C. Schmidt
Affiliation:
Institut für Physikalische Chemie, Technische Universität Darmstadt, Petersenstr. 20, D-64287Germany, pcs@pc.chemie.tu-darmstadt.de
J. Sticht
Affiliation:
Institut für Physikalische Chemie, Technische Universität Darmstadt, Petersenstr. 20, D-64287Germany, pcs@pc.chemie.tu-darmstadt.de
V. Eyert
Affiliation:
Hahn-Meitner-Institut, Department of Physical Chemistry, Berlin, Germany
K.C. Mishra
Affiliation:
Central Research, OSRAM SYLVANIA INC., Beverly, MA
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Abstract

A good understanding of the electronic states near the band gap of large gap materials is essential for designing phosphors when the energy of exciting radiation exceeds the band gap. This is particularly true when phosphors are designed for application in rare gas discharges with vacuum UV (VUV) radiation. Using density functional ab initio methods (augmented spherical waves and full potential linear muffin-tin orbitals), we have analyzed the nature of host excitations near the band gap energy for a number of complex oxides: LaPO4, AIPO4, BaB2O4, YBO3 and LuBO3 and the common trends in the optical transitions in borates and phosphates and the corresponding binary oxides La2O3, Lu2O3, Y2O3, BaO, B2O3 and P2O5. We have also studied the nature of impurity states of Eu3+ and Pr substituting y3+, in large gap oxides. The studies show how the relative ordering of the one-electron states of activator ions with respect to band states of the host lattice may affect their luminescence properties under host excitation.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 560: Symposium E – Luminescent Materials , 1999 , 323
Copyright
Copyright © Materials Research Society 1999

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References

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