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Hillock Growth at the Surface of Pt/TiN Electrodes for Ferroelectric Capacitors During Annealing in N2/O2 Ambient

Published online by Cambridge University Press:  10 February 2011

H. Miura ,
Y. Kumagai  and
Y. Fujisaki
H. Miura
Affiliation:
Mechanical Engineering Research Laboratory, Hitachi, Ltd., Tsuchiura, Ibaraki 300, Japan
Y. Kumagai
Affiliation:
Mechanical Engineering Research Laboratory, Hitachi, Ltd., Tsuchiura, Ibaraki 300, Japan
Y. Fujisaki
Affiliation:
Central Research Laboratory, Hitachi, Ltd., Kokubunji, Tokyo 180, Japan
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Abstract

The hillock growth mechanism at the surface of Pt/TiN electrodes is investigated. TEM and SEM observations confirm that local delamination occurs at the Pt/TiN interface first, and then, plastic deformation of the Pt films under compressive stress forms hollow domes, which result in hillocks. Hillocks always start to grow when the internal stress in the Pt films reaches about −1000 MPa during annealing in N2/O2 ambient. Since the initial internal stress of Pt thin films varies from −500 to 500 MPa, depending on their deposition temperature, the hillock growth temperature strongly depends on the deposition temperature of the Pt films. It is very important, therefore, to control the initial internal stress in Pt films in order to eliminate hillock growth at the surface of Pt/TiN electrodes.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 493: Symposium U – Ferroelectric Thin Film VI , 1997 , 137
Copyright
Copyright © Materials Research Society 1998

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References

REFERENCES

1. Sreenivas, K., Reaney, I., Maeder, T., Setter, N., Jagadish, C., and Elliman, R.G.. J. Appl. Phys., 75(1), 232(1994).Google Scholar
2. Spierings, G. A. C. M., Dormans, G. J. M., Moors, W. G. J., Ulenaers, M. J. E., and Larsen, P. K., J. Appl. Phys., 78(3), 1926(1995).Google Scholar
3. Kim, B. E., Varniere, F., Hugon, M. C., and Agius, B. in Ferroelectric Thin Films V, edited by Desu, S. B., Ramesh, R., Tuttle, B. A., Jones, R. E., and Yoo, I. K. (Mater. Res. Soc. Proc. 433, Pittsburgh, PA, 1996) pp. 163–174.Google Scholar
4. Lee, J. S., Kwon, H. J., Jeong, Y. W., Kim, H. H., Park, K. H., and Kim, C. Y., in Ferroelectric Thin Films V, edited by Desu, S. B., Ramesh, R., Tuttle, B. A., Jones, R. E., and Yoo, I. K. (Mater. Res. Soc. Proc. 433, Pittsburgh, PA, 1996) pp. 175–180.Google Scholar
5. Miura, H., Ohta, H., and Okamoto, N., Appl. Phys. Lett., 60(22), 2746 (1992).Google Scholar
6. Miura, H. and Okamoto, N., J. Appy. Phys., 75(9), 4747 (1994).Google Scholar
7. Miura, H., J. of Japanese Society of Tribologists, 40(3), 228 (1995).Google Scholar