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High-Voltage Electron Microscopy Investigation of Subgrain Boundaries in Recrystallized Silicon-On-Insulator Structures

Published online by Cambridge University Press:  25 February 2011

H. Baumgart  and
F. Phillipp
H. Baumgart
Affiliation:
Philips Laboratories, A Division of North American Philips Corporation, 345 Scarborough Road, Briarcliff Manor, New York 10510
F. Phillipp
Affiliation:
Max Planck Institute for Metals Research, Heisenbergstr. 1, D-7000 Stuttgart 80, West Germany
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Abstract

The microstructure of high-quality recrystallized Si films on SiO2 substrates produced by CO2 laser induced zone-melting has been investigated by high voltage electron microscopy (HVEM). Subgrain boundaries represent the major defects in these recrystallized films. The origin of the subboundaries has been traced to periodic internal stress concentrations occurring at the faceted growth interface. These highly localized stresses cause plastic deformation of the growing single crystal film by nucleation of an array of slip dislocations. The mechanism responsible for the formation of subgrain boundaries has been revealed to be polygonization, where thermally activated dislocations rearrange themselves into the lower energy configuration of the low angle grain boundary.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 35: Symposium A – Energy Beam-Solid Interactions and Transient Thermal Processing/1984 , 1984 , 593
Copyright
Copyright © Materials Research Society 1985

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References

REFERENCES

[1] Limanov, A.B. and Givargizov, E.I., Mat. Letters 2, 93 (1983).Google Scholar
2. Knapp, J.A. and Picraux, S.T., Mat. Res. Soc. Symp. Proc., Vol. 23, p. 533, Elsevier Science Publishing Co., New York (1984).Google Scholar
3. Haond, M., Vu, D.P. and Bensahel, D., J. Appl. Phys., 54 (7) 3892 (1983).Google Scholar
4. Geis, M.W., Smith, H.I., Tsaur, B.Y., Fan, J.C., Silversmith, D.J. and Mountain, R.W., J. Electrochem. Soc., 129, 2813 (1982).Google Scholar
5. Komem, Y. and Weinberg, Z.A., J. Appl. Phys., 56 (8) p. 2213 (1984).Google Scholar
6. Hirth, J.P. and Lothe, J., Theory of Dislocations, McGraw-Hill, New York (1968).Google Scholar
7. Hull, D. and Bacon, D.J., Introduction to Dislocations, p. 17–196, Pergamon Press (1984).Google Scholar
8. Leamy, H.J., Chang, C.C., Baumgart, H., Lemons, R.A. and Chen, J., Mat. Letters 1, 33 (1982).Google Scholar
9. Lemons, R.A., Bosch, M.A. and Herbst, D., Mat. Res. Soc. Symp. Proc., Vol. 13, p. 581, Elsevier Science Publishing Co., New York (1983).Google Scholar
10. Lee, El-Hang, Mat. Res. Soc. Symp. Proc., Vol 23, p. 471 (1984) and this volume (1985).Google Scholar
11. Bauser, E. and Rozgonyi, G.A., J. Electrochem. Soc. Vol. 129, No. 8, 1782 (1982).Google Scholar
12. Bauser, E. in Festkbcrperprobleme (Advances in Solid State Physics) Volume XXIII, p. 141, Grosse, P. ed., Vieweg, Braunschweig (1983).Google Scholar
13.J.Fan, C.C., Tsaur, B-Y, and Chen, C.K., Appl. Phys. Lett. 44, (11) 1086 (1984).Google Scholar