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High-Resolution X-ray Diffraction Analysis of p-Type Strained InGaAs/AlGaAs Multiple Quantum Well Structures

Published online by Cambridge University Press:  10 February 2011

W. Shi ,
D. H. Zhang ,
T. Osotchan ,
P.H. Zhang ,
S. F. Yoon  and
S. Swaminathan
W. Shi
Affiliation:
School of Electrical and Electronic Engineering, Nanyang Technological University Nanyang Avenue, SINGAPORE639798
D. H. Zhang
Affiliation:
School of Electrical and Electronic Engineering, Nanyang Technological University Nanyang Avenue, SINGAPORE639798
T. Osotchan
Affiliation:
School of Electrical and Electronic Engineering, Nanyang Technological University Nanyang Avenue, SINGAPORE639798
P.H. Zhang
Affiliation:
School of Electrical and Electronic Engineering, Nanyang Technological University Nanyang Avenue, SINGAPORE639798
S. F. Yoon
Affiliation:
School of Electrical and Electronic Engineering, Nanyang Technological University Nanyang Avenue, SINGAPORE639798
S. Swaminathan
Affiliation:
School of Electrical and Electronic Engineering, Nanyang Technological University Nanyang Avenue, SINGAPORE639798
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Abstract

Be-doped InGaAs/AIGaAs multiple quantum well (MQW) structures, grown by solid-source molecular beam epitaxy with different doping concentration in the wells, were investigated by xray diffraction and transmission electron microscopy (TEM). Some features have been observed. (1) The MQW mean mismatch increases from 1.176 × 10−3 to 1.195 × 10−3 and 1.29 × 10−3 for the structures with doping concentration of 1 × 1017 cm−3, 1 × 1018cm−3and 2 × 1019 cm−3 in the wells, respectively. (2) The period of the MQW also increases with doping density. (3) The intensity of the first order satellite in the rocking curves decreases as the Be concentration is increased, indicating that indium diffusion in the heavily doped wells is likely more significant than that in the lightly doped ones. (4) The full width at half maximum of the zero-order satellite peak becomes widened as doping concentration increases, indicating that high Be-doping in the well likely deteriorates the interfaces of the multiple quantum well stacks. In addition, TEM measurement is conducted and clear pictures on well and barrier layers of the structures are observed. The information obtained is of great value for the design of p-doped quantum well infrared photodetectors.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 607: Symposium OO – Infrared Applications of Semiconductors III , 1999 , 229
Copyright
Copyright © Materials Research Society 2000

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