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High-Resolution X-Ray Diffraction Analysis of “Devicequality” Cubic GaN Grown on (001)GaAs Substrate Prepared by Atomic-Hydrogen Treatment At “High Temperatures”

Published online by Cambridge University Press:  10 February 2011

A. Yoshikawa ,
Z. X. Qin ,
H. Nagano ,
Y. Sugure ,
A. W. Jia ,
M. Kobayashi ,
M. Shimotomai ,
Y. Kato  and
K. Takahashi
A. Yoshikawa
Affiliation:
Department of Electrical and Electronics Engineering, Chiba University 1-33 Yayoi-cho, Inage-ku, Chiba 263 Japan, yoshi@cute.te.chiba-u.ac.jp
Z. X. Qin
Affiliation:
Department of Electrical and Electronics Engineering, Chiba University 1-33 Yayoi-cho, Inage-ku, Chiba 263 Japan, yoshi@cute.te.chiba-u.ac.jp
H. Nagano
Affiliation:
Department of Electrical and Electronics Engineering, Chiba University 1-33 Yayoi-cho, Inage-ku, Chiba 263 Japan, yoshi@cute.te.chiba-u.ac.jp
Y. Sugure
Affiliation:
Department of Electrical and Electronics Engineering, Chiba University 1-33 Yayoi-cho, Inage-ku, Chiba 263 Japan, yoshi@cute.te.chiba-u.ac.jp
A. W. Jia
Affiliation:
Department of Electrical and Electronics Engineering, Chiba University 1-33 Yayoi-cho, Inage-ku, Chiba 263 Japan, yoshi@cute.te.chiba-u.ac.jp
M. Kobayashi
Affiliation:
Department of Electrical and Electronics Engineering, Chiba University 1-33 Yayoi-cho, Inage-ku, Chiba 263 Japan, yoshi@cute.te.chiba-u.ac.jp
M. Shimotomai
Affiliation:
Department of Electrical and Electronics Engineering, Chiba University 1-33 Yayoi-cho, Inage-ku, Chiba 263 Japan, yoshi@cute.te.chiba-u.ac.jp
Y. Kato
Affiliation:
Department of Electrical and Electronics Engineering, Chiba University 1-33 Yayoi-cho, Inage-ku, Chiba 263 Japan, yoshi@cute.te.chiba-u.ac.jp
K. Takahashi
Affiliation:
Department of Electronics and Information Science, Teikyo University of Science & Technology, 2525 Yatsuzawa, Uenohara, Kitatsurugun, Yamanashi 409-01 Japan
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Abstract

Cubic GaN (c-GaN) layers were grown by if-plasma source MBE on (001) GaAs prepared by atomic-hydrogen treatment at “high temperatures”, and the structural properties of the epilayers were investigated by the high-resolution X-ray rocking curve and the reciprocal space mapping measurements. The growth temperature was varied from 620 to 740°C. It was found that single domain “device-quality” c-GaN layers could be grown for the first time; the FWHM of the X-ray rocking curves for the (002) c-GaN could be as small as 70 - 90 arcsec and the inclusion of h-GaN phase in the c-GaN epilayers grown at temperatures above 680°C could be less than 4×10-3.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 482 , 1997 , 465
Copyright
Copyright © Materials Research Society 1998

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References

[1] Lin, M.E., Xue, G., Zhou, G.L., Greene, J.E., and Morkoc, H., Appl. Phys. Lett., 63 (1993) 932.10.1063/1.109848Google Scholar
[2] Kuznia, J.N., Yang, J.W., Chen, Q.C., Krishnakutty, S., Khan, M.A., George, T., and Freitas, J. Jr., Appl. Phys. Lett, 65 (1994) 2407.10.1063/1.112690Google Scholar
[3] Okumura, H., Yoshida, S., and Okahisa, T., Appl. Phys. Lett., 64 (1994) 2997.10.1063/1.111383Google Scholar
[4] Cheng, T.S., Jenkins, L.C., Hooper, S.E., Foxon, C.T., Orton, J.W., and Lacklison, D.E., Appl. Phys. Lett., 66 (1995) 1509.10.1063/1.113671Google Scholar
[5] Brandt, O., Yang, H., Jenichen, B., Suzuki, Y., Daweritz, L., and Ploog, K.H., Phys. Rev., B52 (1995) R2253.10.1103/PhysRevB.52.R2253Google Scholar
[6] Kuwano, N., Nagatomo, Y., Kobayashi, K., Oki, K., Miyoshi, S., Yaguchi, H., Onabe, K., and Shiraki, Y., Jpn. J. Appl. Phys., 33 (1994) 18.10.1143/JJAP.33.18Google Scholar
[7] Tsuchiya, H., Sunaba, K., Yonemura, S., Suemasu, T., and Hasegawa, F., Jpn. J. Appl. Phys., 36 (1996) LI.Google Scholar
[8] Nakadaira, A. and Tanaka, H., Proc. Int. Symp. Blue LD and LEDs, ed. by Yoshikawa, A. et al. (Ohmsha, 1996) p.90.Google Scholar
[9] Yamaguchi, K., Qin, Z.X., Nagano, H., Kobayashi, M., Yoshikawa, A., and Takahashi, K.; Jpn. J. Appl. Phys., 36 (1997) L1367.10.1143/JJAP.36.L1367Google Scholar
[10] Yoshikawa, A. et al, Proc. MRS 1997 Fall Meetings (Symposium D).Google Scholar
[11] Sugaya, T. and Kawabe, M., Jpn. J. Appl. Phys., 30 (1991) L402.10.1143/JJAP.30.L402Google Scholar
[12] Yamada, M. and Ide, Y., Jpn. J. Appl. Phys., 33 (1994) L671.10.1143/JJAP.33.L671Google Scholar
[13] Yoshida, S., Okumura, H., Feuiliet, G., Hacke, P., and Balakrishnan, K., MRS Symp. Proc., vol.449, p. 173.Google Scholar