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High-Performance SiGe MODFET Technology

Published online by Cambridge University Press:  17 March 2011

S. J. Koester ,
J. O. Chu ,
K. L. Saenger ,
Q. C. Ouyang ,
J.A. Ott ,
D. F. Canaperi ,
J. A. Tornello ,
C.V. Jahnes  and
S. E. Steen
S. J. Koester
Affiliation:
IBM Research Division, T. J. Watson Research Center 1101 Kitchawan Rd / Rte 134 P.O. Box 218 Yorktown Heights, NY 10598
J. O. Chu
Affiliation:
IBM Research Division, T. J. Watson Research Center 1101 Kitchawan Rd / Rte 134 P.O. Box 218 Yorktown Heights, NY 10598
K. L. Saenger
Affiliation:
IBM Research Division, T. J. Watson Research Center 1101 Kitchawan Rd / Rte 134 P.O. Box 218 Yorktown Heights, NY 10598
Q. C. Ouyang
Affiliation:
IBM Research Division, T. J. Watson Research Center 1101 Kitchawan Rd / Rte 134 P.O. Box 218 Yorktown Heights, NY 10598
J.A. Ott
Affiliation:
IBM Research Division, T. J. Watson Research Center 1101 Kitchawan Rd / Rte 134 P.O. Box 218 Yorktown Heights, NY 10598
D. F. Canaperi
Affiliation:
IBM Research Division, T. J. Watson Research Center 1101 Kitchawan Rd / Rte 134 P.O. Box 218 Yorktown Heights, NY 10598
J. A. Tornello
Affiliation:
IBM Research Division, T. J. Watson Research Center 1101 Kitchawan Rd / Rte 134 P.O. Box 218 Yorktown Heights, NY 10598
C.V. Jahnes
Affiliation:
IBM Research Division, T. J. Watson Research Center 1101 Kitchawan Rd / Rte 134 P.O. Box 218 Yorktown Heights, NY 10598
S. E. Steen
Affiliation:
IBM Research Division, T. J. Watson Research Center 1101 Kitchawan Rd / Rte 134 P.O. Box 218 Yorktown Heights, NY 10598
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Abstract

An overview of SiGe modulation-doped field-effect transistor (MODFET) technology is provided. The layer structures and mobility enhancements for both p- and n-channel modulation-doped quantum wells are described and compared to mobilities in Si/SiO2 inversion layers. Next, previous results on high-performance n- and p-MODFETs fabricated at IBM and elsewhere are reviewed, followed by recent results on laterally-scaled Si/SiGe n-MODFETs with gate lengths as small as 70 nm. We conclude with a discussion of the materials issues for the future vertical and lateral scaling of SiGe MODFETs.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 809: Symposium B – High-Mobility Group-IV Materials and Devices , 2004 , B7.2
Copyright
Copyright © Materials Research Society 2004

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