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Highly Conformal Diffusion Barriers of Amorphous Niobium Nitride

Published online by Cambridge University Press:  10 February 2011

R. G. Gordon ,
X. Liu ,
R. N. R. Broomhall-Dillard  and
Y. Shi
R. G. Gordon
Affiliation:
Harvard University Chemical Laboratories, 12 Oxford Street, Cambridge, MA 02138
X. Liu
Affiliation:
Harvard University Chemical Laboratories, 12 Oxford Street, Cambridge, MA 02138
R. N. R. Broomhall-Dillard
Affiliation:
Harvard University Chemical Laboratories, 12 Oxford Street, Cambridge, MA 02138
Y. Shi
Affiliation:
Chemat Technology, Inc., 19365 Business Center Drive, Northridge, CA 91324
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Abstract

Electrically conductive films of niobium nitride were formed by chemical vapor deposition from tetrakis(diethylamido)niobium and ammonia. The films were found to be highly conformal, with step coverage nearly 100% for substrate temperatures near 350°C. The structure of the films was amorphous by diffraction of X-rays and electrons. The reliability of the films as barriers to diffusion of copper was also tested.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 564: Symposium N – Advanced Interconnects and Contacts , 1999 , 335
Copyright
Copyright © Materials Research Society 1999

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