Hostname: page-component-848d4c4894-4rdrl Total loading time: 0 Render date: 2024-06-26T21:56:39.342Z Has data issue: false hasContentIssue false
  • English
  • Français

High Quality Uniform Thick Epitaxy of 4H-SiC for High Power Device Applications

Published online by Cambridge University Press:  01 February 2011

Jie Zhang ,
Janice Mazzola ,
Esteban Romano ,
Carl Hoff ,
Mike Mazzola ,
Janna Casady  and
Jeff Casady
Jie Zhang
Affiliation:
jie.zhang@semisouth.com, SemiSouth Laboratories, Inc., Technology Support, 201 Research Blvd.,, Starkville, Mississippi, 39759, United States, (662) 324-7607, (662) 324-7997
Janice Mazzola
Affiliation:
janice.mazzola@semisouth.com, SemiSouth Laboratories, Inc., Starkville, Mississippi, 39759, United States
Esteban Romano
Affiliation:
esteban.romano@semisouth.com, SemiSouth Laboratories, Inc., Starkville, Mississippi, 39759, United States
Carl Hoff
Affiliation:
carl.hoff@semisouth.com, SemiSouth Laboratories, Inc., Starkville, Mississippi, 39759, United States
Mike Mazzola
Affiliation:
mike.mazzola@semisouth.com, SemiSouth Laboratories, Inc., Starkville, Mississippi, 39759, United States
Janna Casady
Affiliation:
janna.casady@semisouth.com, SemiSouth Laboratories, Inc., Starkville, Mississippi, 39759, United States
Jeff Casady
Affiliation:
jeff.casady@semisouth.com, SemiSouth Laboratories, Inc., Starkville, Mississippi, 39759, United States
Get access

Abstract

Growth of thick SiC epilayers has been investigated in a horizontal hot-wall CVD reactor capable of growing 3x2-in wafers or single wafer with a diameter up to 100mm. Good uniformity of lower than 3% for thickness and lower than 20% for doping has been obtained on 2-in or 3-in epi wafers with thickness of 60 - 120 μm. Low intentional nitrogen doping of 5.8x1014 cm-3 was achieved on a 3-in epi wafer with a thickness of 120 μm. A higher growth rate of 10 μm/h was achieved while good uniformity was maintained. Surface morphology of the thick epilayers was carefully examined and smooth surface was observed for epilayers thicker than 100 μm. The defect density of the thick epilayers was also discussed and the high purity of the thick epi was verified by low temperature PL measurement.

Keywords

chemical vapor deposition (CVD) (deposition)epitaxysemiconducting
Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 911: Symposium B – Silicon Carbide 2006 – Materials, Processing and Devices , 2006 , 0911-B09-03
Copyright
Copyright © Materials Research Society 2006

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

[1] Sugawara, Y., Materials Science Forum vols. 457–460 (2004), p. 963 Google Scholar
[2] Ellison, A., Zhang, J., Henry, A. and Janzén, E., J. Cryst. Growth vol. 236 (2002), p. 225 Google Scholar
[3] Fujihira, K., Kimoto, T. and Matsunami, H., Materials Science Forum vols. 389–393 (2002), p. 175 Google Scholar
[4] Tsuchida, H., Kamata, I., Jikimoto, T. and Izumi, K., Materials Science Forum vols. 389–393 (2002), p. 171 Google Scholar
[5] Kordina, O., Henry, A., Janzen, E. and Carter, C.H. Jr, Materials Science Forum vols. 264–268 (1998), p. 97 Google Scholar
[6] Zhang, J., Mazzola, J., Hoff, C., Koshka, Y. and Casady, J.B., Materials Science Forum vols. 483–485 (2005), p. 77 Google Scholar
[7] Myers, R., Kordina, O., Shishkin, Z., Rao, S., Everly, R. and Saddow, S.E., Materials Science Forum vols. 483–485 (2005), p. 73 Google Scholar
[8] Hecht, C., Thomas, B. and Bartsch, W., presented at International Conference of SiC and Related Materials, Pittsburgh, October 2005 Google Scholar
[9] Burk, A.A., O'Loughlin, M.J., Paisley, M.J., Powell, A.R., Brady, M.F., Leonard, R.T and McClure, D.A., presented at International Conference of SiC and Related Materials, Pittsburgh, October 2005 Google Scholar
[10] Matsunami, H. and Kimoto, T., Materials Science Engineering, R20. No. 3 (1997), p. 125 Google Scholar