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High Quality Ultra Thin CVD Si3N4Gate Dielectrics Fabricated By Rapid Thermal Process

Published online by Cambridge University Press:  10 February 2011

S. C. Song ,
H. F. Luan ,
M. Gardner ,
J. Fulford ,
M. Allen  and
D. L. Kwong
S. C. Song
Affiliation:
Microelectronics Research Center, Department of Electrical and Computer EngineeringThe University of Texas, Austin, TX 78712, dlkwong@mail.utexas.edu
H. F. Luan
Affiliation:
Microelectronics Research Center, Department of Electrical and Computer EngineeringThe University of Texas, Austin, TX 78712, dlkwong@mail.utexas.edu
M. Gardner
Affiliation:
Advanced Micro Devices, Austin, TX 78741
J. Fulford
Affiliation:
Advanced Micro Devices, Austin, TX 78741
M. Allen
Affiliation:
Advanced Micro Devices, Austin, TX 78741
D. L. Kwong
Affiliation:
Microelectronics Research Center, Department of Electrical and Computer EngineeringThe University of Texas, Austin, TX 78712, dlkwong@mail.utexas.edu
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Abstract

In this paper, we report performance and reliability of CMOS devices with ultra thin (<20Å) Si3N4gate dielectric fabricated by in-situ rapid thermal CVD (RTCVD) process, and compare with control SiO2devices of identical equivalent oxide thickness (Tox,eq). Ultra thin CVD Si3N4 devices show significantly lower gate leakage current, complete suppression of boron penetration, improved MOSFET performance, and enhanced reliability against electrical stress.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 567: Symposium R – Ultrathin SiO2 and Higg-K Materials for ULSI Gate Dielectrics , 1999 , 83
Copyright
Copyright © Materials Research Society 1999

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References

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