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High quality p-type ZnO film grown on ZnO substrate by nitrogen and tellurium co-doping

Published online by Cambridge University Press:  31 January 2011

Seunghwan Park ,
Tsutomu Minegishi ,
jinsub Park ,
Hyunjae Lee ,
Toshinori Taishi ,
Ichiro Yonenaga ,
Dongcheol Oh ,
Mina Jung ,
Ji-Ho Chang  and
Soonku Hong
...Show all authors
Seunghwan Park
Affiliation:
PARK.Seunghwan@nims.go.jp
Tsutomu Minegishi
Affiliation:
tmine@imr.tohoku.ac.jp, Tohoku University, Applied Physics, Sendai, Japan
jinsub Park
Affiliation:
jspark@imr.tohoku.ac.jp, Tohoku University, Applied Physics, Sendai, Japan
Hyunjae Lee
Affiliation:
kalos@cir.tohoku.ac.jp, Tohoku University, Applied Physics, Sendai, Japan
Toshinori Taishi
Affiliation:
taishi@imr.tohoku.ac.jp, Tohoku University, IMR, Sendai, Japan
Ichiro Yonenaga
Affiliation:
yonenaga@imr.tohoku.ac.jp, Tohoku University, IMR, Sendai, Japan
Dongcheol Oh
Affiliation:
ohdongcheol@hoseo.edu, Hoseo university, Defense science, Asan, Korea, Republic of
Mina Jung
Affiliation:
mina-jung@hhu.ac.kr, Korea Maritime University, Major of Semiconductor Physics, Busan, Korea, Republic of
Ji-Ho Chang
Affiliation:
jiho_chang@hhu.ac.kr, Korea Maritime University, Department of Nano Semiconductor, Busan, Korea, Republic of
Soonku Hong
Affiliation:
soonku@cnu.ac.kr, Chungnam national university, Deajeon, Korea, Republic of
Takafumi Yao
Affiliation:
tyao@cir.tohoku.ac.jp, Tohoku University, CIR, Sendai, Japan
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Abstract

Nitrogen and tellurium co-doped ZnO (ZnO:[N+Te]) films have been grown on (0001) ZnO substrate by plasma-assisted molecular beam epitaxy. The electron concentration of tellurium doped ZnO (ZnO:Te) gradually increases, compared that of undoped ZnO (u-ZnO). On the other hand, conductivity of ZnO:[N+Te] changes from n-type to p-type characteristic with a hole concentration of 4×1016 cm-3. However, nitrogen doped ZnO film (ZnO:N) still remain as n-type conductivity with a electron concentration of 2.5×1017 cm-3. Secondary ion mass spectroscopy reveals that nitrogen concentration ([N]) of ZnO:[N+Te] film (2×1021 cm-3) is relatively higher than that of ZnO:N film (3×1020 cm-3). 10 K photoluminescence spectra shows that considerable improvement of emission properties of ZnO:[N+Te] with an emergence of narrow acceptor bound exciton (A°X, 3.359 eV) and donor-acceptor pair (DAP, 3.217 eV), compared with those of u-ZnO. Consequently, high quality p-type ZnO with high N concentration is realized by using Te and N co-doping technique due to reduction of Madelung energy.

Keywords

epitaxyTeN
Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 1201: Symposium H – Zinc Oxide and Related Materials-2009 , 2009 , 1201-H05-25
Copyright
Copyright © Materials Research Society 2010

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