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High Quality n-Cd0.2 Hg0.8 Te Grown by Liquid Phase Epitaxy

Published online by Cambridge University Press:  26 February 2011

K. Yasumura ,
H. Kimura ,
Y. Komine  and
K. Sato
K. Yasumura
Affiliation:
Materials and Electronic Devices Laboratory, Mitsubishi Electric Corporation, Amagasaki, Hyogo, Japan
H. Kimura
Affiliation:
Materials and Electronic Devices Laboratory, Mitsubishi Electric Corporation, Amagasaki, Hyogo, Japan
Y. Komine
Affiliation:
LSI Laboratory, Mitsubishi Electric Corporation, Itami, Hyogo, Japan
K. Sato
Affiliation:
Materials and Electronic Devices Laboratory, Mitsubishi Electric Corporation, Amagasaki, Hyogo, Japan
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Abstract

Influential factors to the detectivity of n-CMT grown by liquid phase epitaxy on CdTe(111)B substrate are investigated. The factors are such as qualities of the substratesdopants and electrical parameters by which photoconductivity in CMT is governed.

We show that the doping with small amounts of In is an appropriate mean not only to raise the mobility but also to make reproductivity better. The In- doped epitagia�r after annealed has the highest mobility among tested in 3×10 cm5 /Vsec, and the photoconductive lifetime in 0.54 μsec at 77K.The resultant detectivity of an infrared device is 3×1010 cmHz1/2 w−1.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 102 , 1987 , 91
Copyright
Copyright © Materials Research Society 1988

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References

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