Hostname: page-component-7c8c6479df-94d59 Total loading time: 0 Render date: 2024-03-28T18:04:39.855Z Has data issue: false hasContentIssue false

High Purity Titanium Silicide Films Formed by Sputter Deposition and Rapid Thermal Annealing

Published online by Cambridge University Press:  28 February 2011

T. Brat
Affiliation:
Varian Specialty Metals Div., Grove City, Oh 43123
J.C.S. Wei
Affiliation:
Intel Corp., Components Research, Santa Clara, Ca 95051
J. Poole
Affiliation:
Varian Specialty Metals Div., Grove City, Oh 43123
D. Hodul
Affiliation:
Varian Research Center, Palo Alto, Ca 94303
N. Parikh
Affiliation:
University of North Carolina, Chapel Hill, NC 27514
C. Wickersham Jr.
Affiliation:
Varian Specialty Metals Div., Grove City, Oh 43123
Get access

Abstract

We have investigated the formation of titanium silicide films sputter deposited from a high purity (99.995%) composite TiSi2.2 target. The films, sputtered at a rate of 3.7 nm/sec, were deposited on Si(100), Si02 , and N+ Poly-Si substrates at temperatures ranging from room temperature to 425°C. Room temperature depositions produced amorphous films, while heated substrate depositions formed crystalline films with a metastable C49 TiSi2 structure. Rapid thermal processing of these films at temperatures higher than 700°C resulted in the formation of a stable C54 TiSi2 structure. Stoichiometry of the deposited films over a 10 cm diameter wafer was found to be independent of the substrate temperature. Stress in the films was measured as a function of deposition and annealing parameters. The amorphous films showed a tensile stress of about 0.1 GPa, while films deposited on substrates at 425°C had an order of magnitude higher tensile stress level.The resistivity measured on the 400°C deposited films was about half of that obtained with the films deposited at roomtemperature. A comparison between films deposited on a hot substrate and those which were rapid thermal processed is presented.

Type
Research Article
Copyright
Copyright © Materials Research Society 1987

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

REFERENCES

[1] Crowder, B.L. and Zirinsky, S., IEEE Trans. Electron Devices, ed-26, 369 (1979).Google Scholar
[2] Kato, H. and Nakamura, Y., Thin Solid Films, 34, 135 (1976).Google Scholar
[3] Bene, R.W. and Young, H. Y., J. Electron. Mater., 12, 1 (1983).Google Scholar
[4] Guldan, A., Schiller, V., Steffen, A., and Balk, P., Thin Solid Films, 100, 1 (1983).Google Scholar
[5] Nemanich, R.J., Fulks, R.T., Stafford, B.L., and Vander Plas, H.A., J. Vac. Sci. Technol., A3, 938 (1985).Google Scholar
[6] Murarka, S.P. and Fraser, D.B., J. Appl. Phys., 51, 342 (1980)Google Scholar
[7] Murarka, S.P. and Fraser, D.B., J. Appl. Phys., 51, 350 (1980).Google Scholar
[8] Murarka, S.P., Fraser, D.B., Sinha, A.K., and Levinstein, H.J., IEEE Trans. Electron Devices, ed-27, 1409 (1980).Google Scholar
[9] Pinizzotto, R.F., Wang, K.L. and Matteson, S., in “Semiconduc tor Silicon 1981”, The Electrochemical Society Proceeding Series, PV 81-5, p. 562 (1981).Google Scholar
[10] Beyers, R. and Sinclair, R., J. Appl. Phys., 57, 5240 (1985).Google Scholar
[11] D'Heurle, F.M., Gas, P., Engstrom, I., Nygren, S., Ostling, M. and Peterson, C.S., IBM Research Report, RC 1151 (#50067) 5/3/85.Google Scholar
[12] Holloway, K. and Sinclair, R., J. Appl. Phys. 61, 1359 (1987).Google Scholar
[13] Raaijmakers, I.J.M., Reader, A.H., and van Houtum, H.J.W., J. Appl. Phys. 61, 2527 (1987).Google Scholar
[14] Powell, R.A., Chow, R., Thridandam, C., Fulks, R.T., Blech, I.A.,and Pan, J.D.T., IEEE Electron Device Lett., edl-4, 380 (1983).Google Scholar
[15] Yachi, T., IEEE Electron Device Lett., edl-5, 217 (1984).Google Scholar
[16] Tanielian, M., Blackstone, S. and Lajos, R., Appl. Phys. Lett. 45, 444 (1984).Google Scholar
[17] Tanielian, M. and Blackstone, S., J. of Electroch. Soc., 132, 148 (1985).Google Scholar
[18] Retajczyk, T.F., Sinha, A.K., Thin Solid Films, 70, 241 (1980).Google Scholar
[19] Pan, J.T. and Blech, I., J. Appl. Phys. 55, 2874 (1984).Google Scholar
[20] Trade Mark of Varian Associates Inc., Palo Alto, Ca.Google Scholar
[21] Kern, W. and Puotinen, D.A., RCA Review 31, 187 (1970).Google Scholar
[22] Lamont, L.T.,, Solid State Technol., 107 Sept.(1979)Google Scholar
[23] Flinn, P.A., Gardner, D.S. and Nix, W.D., IEEE Trans. Electron Dev., ed-34, 689 (1987).Google Scholar
[24] Broadbent, E.K., Morgan, A.E., Coulman, B., Huang, I.W., and Kuiper, A.E.T., to be published Thin Solid Films.Google Scholar
[25] Thompson, R.D., Takai, H., Psaras, P.A., and Tu, K.N., J. Appl.Phys. 61, 540 (1987).Google Scholar