Hostname: page-component-77c89778f8-rkxrd Total loading time: 0 Render date: 2024-07-17T02:41:59.836Z Has data issue: false hasContentIssue false
  • English
  • Français

High Power and High Frequency Silicon Carbide Devices

Published online by Cambridge University Press:  21 February 2011

John W. Palmour ,
C. H. Carter JR ,
C. E. Weitzel  and
K. J. Nordquist
John W. Palmour
Affiliation:
Cree Research, Inc., 2810 Meridian Parkway, Durham, NC 27713
C. H. Carter JR
Affiliation:
Cree Research, Inc., 2810 Meridian Parkway, Durham, NC 27713
C. E. Weitzel
Affiliation:
Phoenix Corporate Research Laboratories, Motorola, Inc., Tempe, AZ 85284
K. J. Nordquist
Affiliation:
Phoenix Corporate Research Laboratories, Motorola, Inc., Tempe, AZ 85284
Get access

Abstract

The breakdown electric field of 4H-SiC as a function of doping was measured using pn junction rectifiers, with maximum voltages of 1130 V being achieved. 4H-SiC vertical power MOSFET structures have shown specific on-resistances of 33 mΩ-cm2 for devices capable of blocking 150 V. A current density of 100 A/cm2 was achieved at a drain voltage of 3.3 V. Thyristors fabricated in SiC have also shown blocking voltages of 160 V and 100 A/cm2 at 3.0 V. High temperature operation was measured, with the power MOSFETs operating to 300°C, and the thyristors operating to 500°C.

Submicron 6H- and 4H-SiC MESFETs have shown good I-V characteristics to Vd= 40 V, with an Idss of 200–300 mA/mm. The maximum operating frequencies (fmax) achieved for 6H-SiC MESFETs is 13.8 GHz, with small-signal power gains of 9.8 dB and 2.9 dB at 5 GHz and 10 GHz, respectively. 4H-SiC MESFETs have demonstrated an RF output power density of 2.8 W/mm at 1.8 GHz. This is the highest power density ever reported for SiC and is 2–3 times higher than reported for comparable GaAs devices.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 339: Symposium D – Diamond, Silicon Carbide and Nitride Wide Bandgap Semiconductors , 1994 , 133
Copyright
Copyright © Materials Research Society 1994

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

REFERENCES

1. Edmond, J.A., Waltz, D.G., Brueckner, S., Kong, H.S., Palmour, J.W., and Carter, C.H. Jr, Proc. First International High Temp. Electron. Conf., edited by King, D.B. and Thome, F.V. (Sandia National Labs, Albuquerque, NM, 1991) pp. 500–505.Google Scholar
2. Slack, G.A., Phys, J.. Chem. Solids 34, 321 (1973).Google Scholar
3. Bhatnagar, M. and Baliga, B.J., IEEE Trans, on Electron Devices 40, 645 (1993).Google Scholar
4. Schaffer, W.J., Kong, H.S., Negley, G.H., and Palmour, J.W., to be published, Proc, of 1993 Intnl. Conf. SiC & Related Matls. edited by Spencer, M. & Harris, G., (Intnl. Proc. in Phys.).Google Scholar
5. Schaffer, W.J., Negley, G.H., Irvine, K.G., and Palmour, J.W., Diamond. SiC. and Nitride Wide-Bandgap Semiconductors, edited by Carter, C.H. Jr, Gildenblatt, G., Nakamura, S., and Nemanich, R.J., (Mater. Res. Soc. Proc, this volume, Pittsburgh, PA, 1994).Google Scholar
6. von Muench, W. and Pettenpaul, E., J. Appl. Phys. 48, 4823 (1977).Google Scholar
7. Shin, M.W., Bilbro, G.L., and Trew, R.J., 1993 IEEE/Cornell Conference (IEEE).Google Scholar
8. Palmour, J.W., Weitzel, C.E., Nordquist, K., and Carter, C.H., to be published. Proc, of 1993 Intnl. Conf. SiC & Related Matls, edited by Spencer, M. & Harris, G., (Intnl. Proc. in Phys.).Google Scholar
9. Sriram, S., Clarke, R.C., Hanes, M.H., McMullin, P.G., Brandt, C.D., Smith, T.J., Burk, A.A. Jr, Hobgood, H.M., Barrett, D.L., and Hopkins, R.H., to be published, Proc, of 1993 Intnl. Conf. SiC & Related Matls, edited by Spencer, M. & Harris, G., (Intnl. Proc. in Phys.).Google Scholar
10. Neudeck, P.G. and Powell, J.A., IEEE Electron Device Lett. 15, 63 (1994).Google Scholar
11. Neudeck, P.G., Larkin, D.J., Powell, J.A., Matus, L.G., and Salupo, C.S., Appl. Phys. Lett. 64(11), 1386 (1994).Google Scholar
12. Palmour, J.W., Edmond, J.A., Kong, H.S., and Carter, C.H. Jr, 1993 Proc. 28th Intersocietv Energy Conversion Conference. (Amer. Chem. Soc. 1993) pp. 1.249–1.254.Google Scholar
13. Crofton, J., Barnes, P.A., Williams, J., and Edmond, J.A., Appl. Phys. Lett. 62, 384 (1993).Google Scholar
14. Palmour, J.W., Edmond, J., Kong, H.S., and Carter, C.H. Jr, to be published, Proc, of 1993 Intnl. Conf. SiC & Related Matls, edited by Spencer, M. & Harris, G., (Intnl. Proc. in Phys.).Google Scholar