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High Performance n- and p-channel Strained Single Grain Silicon TFTs using Excimer Laser
Published online by Cambridge University Press: 31 January 2011
Abstract
In this paper we investigate the carriers mobility enhancement of the n- and p-channel single-grain silicon thin-film transistors (SG-TFTs) by μ-Czochralski process at low-temperature process (< 350 °C). The high laser energy density nearby the ablation phenomenon that completely melts the silicon layer during the crystallization is responsible for high tensile strain and good crystal quality of the silicon grains, which lead carriers mobility enhancement.
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- Copyright © Materials Research Society 2009
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