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High Mobility Non-Hydrogenated Low Temperature Polysilicon TFTs

Published online by Cambridge University Press:  15 February 2011

F. Plais ,
P. Legagneux ,
T. Kretz ,
R. Stroh ,
O. Huet  and
D. Pribat
F. Plais
Affiliation:
Thomson-CSF LCR, 91404 Orsay cedex, France
P. Legagneux
Affiliation:
Thomson-CSF LCR, 91404 Orsay cedex, France
T. Kretz
Affiliation:
Thomson-CSF LCR, 91404 Orsay cedex, France
R. Stroh
Affiliation:
Thomson-CSF LCR, 91404 Orsay cedex, France
O. Huet
Affiliation:
Thomson-CSF LCR, 91404 Orsay cedex, France
D. Pribat
Affiliation:
Thomson-CSF LCR, 91404 Orsay cedex, France
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Abstract

We have fabricated polysilicon (poly-Si) thin film transistors (TFTs) using a standard 4-mask sequence, with self-aligned ion implantation for source and drain doping. The active layer was obtained by solid phase crystallisation of high purity Si2H6-deposited amorphous Si, whereas the gate oxide was synthesised by a novel plasma deposition technique, namely distributed electron cyclotron resonance plasma enhanced chemical vapour deposition (DECR PECVD). We have obtained high carrier mobilities (70 cm2V−1s−1 for electrons and 40 cm2V−1s−1 for holes) with an excellent uniformity and without the need for a post-hydrogenation treatment. Moreover, we show that the TFT characteristics are practically insensitive to hot carrier effects.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 345: Symposium M – Flat Panel Display Materials , 1994 , 87
Copyright
Copyright © Materials Research Society 1994

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