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High Field Electron Drift in a-Si:H

Published online by Cambridge University Press:  01 January 1993

Qing Gu ,
Eric A. Schiff ,
Jean Baptiste Chevrier  and
Bernard Equer
Qing Gu
Affiliation:
Department of Physics, Syracuse University, Syracuse, NY 13244-1130, USA
Eric A. Schiff
Affiliation:
Department of Physics, Syracuse University, Syracuse, NY 13244-1130, USA
Jean Baptiste Chevrier
Affiliation:
Ecole Polytechnique, Laboratoire de Physique des Interfaces et des Couches Minces,Palaiseau, FRANCE
Bernard Equer
Affiliation:
Ecole Polytechnique, Laboratoire de Physique des Interfaces et des Couches Minces,Palaiseau, FRANCE
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Abstract

We have measured the electron drift mobility in a-Si:H at high electric fields (E ≤ 3.6 x 105 V%cm). The a-Si:Hpin structure was prepared at Palaiseau, and incorporated a thickp+ layer to retard high field breakdown. The drift mobility was obtained from transient photocurrent measurements from 1 ns - 1 ms following a laser pulse. Mobility increases as large as a factor of 30 were observed; at 77 K the high field mobility de¬pended exponentially upon field (exp(E/Eu), where E u= 1.1 x 105 V%cm). The same field dependence was observed in the time range 10 ns – 1 μs, indicating that the dispersion parameter change with field was negligible. This latter result appears to exclude hopping in the exponential conduction bandtail as the fundamental transport mechanism in a-Si:H above 77 K; alternate models are briefly discussed.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 297: Symposium A – Amorphous Silicon Technology - 1993 , 1993 , 425
Copyright
Copyright © Materials Research Society 1993

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References

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