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High Electron Mobility W-doped In2O3 Thin Films
Published online by Cambridge University Press: 26 February 2011
Abstract
High electron mobility thin films of In2−xWxO3+d (0 ≤ × ≤ 0.075) were prepared by pulsed laser deposition. The highest mobility polycrystalline and textured films show mobility >110 cm2/Vs on both amorphous SiO2 and single crystal yttria-stabilized zirconia substrates. The carrier density is in the range 1−3 × 1020 cm−3 at room temperature. The W dopant concentration for films with optimized electrical properties was x ∼ 0.03.
- Type
- Research Article
- Information
- MRS Online Proceedings Library (OPL) , Volume 905: Symposium DD – Materials for Transparent Electronics , 2005 , 0905-DD01-02
- Copyright
- Copyright © Materials Research Society 2006