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High Electric field effects on the Thermal Generation in Hydrogenated Amorphous Silicon

Published online by Cambridge University Press:  15 February 2011

A. Ilie  and
B. Equer
A. Ilie
Affiliation:
Lab. PICM (UPR258 CNRS), Ecole Polytechnique, 91128 Palaiseau Cedex, France
B. Equer
Affiliation:
Lab. PICM (UPR258 CNRS), Ecole Polytechnique, 91128 Palaiseau Cedex, France
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Abstract

We have studied the electric field dependence of the electron-hole thermal generation process in hydrogenated amorphous silicon. A model was developed which takes into account the Poole-Frenkel effect and the thermally assisted tunneling. In order to explain the experimental results it was necessary to consider a strong electron-lattice interaction describing the carrier tunneling mechanism. Deep defects relaxation is also discussed.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 467: Symposium A – Amorphous and Microcrystalline Silicon Technology - 1997 , 1997 , 185
Copyright
Copyright © Materials Research Society 1997

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References

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