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High Dose Carbon Ion Implantation Studies in Silicon

Published online by Cambridge University Press:  28 February 2011

K. Srikanth ,
M. Chu ,
S. Ashok ,
N. Nguyen  and
K. Vedam
K. Srikanth
Affiliation:
Department of Engineering Science & Mechanics and Center for Electronic Materials and Devices, The Pennsylvania State University, University Park, PA 16802
M. Chu
Affiliation:
Department of Engineering Science & Mechanics and Center for Electronic Materials and Devices, The Pennsylvania State University, University Park, PA 16802
S. Ashok
Affiliation:
Department of Engineering Science & Mechanics and Center for Electronic Materials and Devices, The Pennsylvania State University, University Park, PA 16802
N. Nguyen
Affiliation:
Materials Research Laboratory, The Pennsylvania State University, University Park, PA 16802, USA
K. Vedam
Affiliation:
Materials Research Laboratory, The Pennsylvania State University, University Park, PA 16802, USA
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Abstract

The electrical properties of crystalline Si (c-Si) subjected to high-dose (1E17 cm-2) implantation of C with varying post- anneal conditions have been investigated. The electrical barrier formation and carrier transport across the implanted layer have been studied using metal-implanted layer-Si structures. In the as-implanted samples, a Schottky diode-like behaviour is seen but with a very high diode ideality factor. The well-known influence of ion damage on the Si surface barrier is clearly evident, but in addition we see the domination of transport by a Si-C buried layer formed after annealing . Spectroscopic ellipsometry measurements and FTIR spectroscopy confirm the formation of buried Si-C.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 107: Symposium H – Silicon-on-Insulator and Buried Metals in Semiconductors , 1987 , 483
Copyright
Copyright © Materials Research Society 1988

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References

1 Canham, L.T., Barraclough, K.G. and Roberts, D.J., Appl. Phys. Lett, 51, 1509 (1987).Google Scholar
2 Kimura, T.,Kagiyama, S. and Yugo, S., Thin Solid Films 24, 191 (1982).CrossRefGoogle Scholar
3 Borders, J.A. Picraux, S.T. and Beezhold, W., Appl.Phys.Lett. 18, 509 (1971).Google Scholar
4 Golecki, I.,Kroko, L. and Glass, H.L., Journal of Electron. Mater. 16, 315 (1987).Google Scholar
5 Ashok, S., Chow, T.P. and Baliga, B.J., Appl. Phys. Lett. 42, 687 (1983).Google Scholar
6 Ashok, S., Krautle, H. and Beneking, H., Appl. Phys. Lett. 45, 431 (1984).Google Scholar
7 Ashok, S., Giewont, K. and Vyas, H.P., Phys. Stat. Sol. (a) 98, K99 (1986).Google Scholar
8 Giewont, K., Ashok, S. and Mogro-Campero, A., Thin Solid Films 142, 13 (1986).Google Scholar
9 W. Rothemund and C.R. Fritzsche, , J. Electrochem. Soc. 121, 586 (1974).Google Scholar
10 Aspnes, D.E. and Studna, A.A., Appl. Opt. 14, 220 (1975).Google Scholar
11 Aspnes, D.E. and Theeten, J.P., Phys. Rev. Lett. 43, 1046 (1979).Google Scholar
12 Vedam, K., McMarr, P.J. and Narayan, J., Appl. Phys. Lett. 47, 339 (1985).CrossRefGoogle Scholar