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Heteroepitaxy of GaAs on Si by MOCVD
Published online by Cambridge University Press: 28 February 2011
Abstract
The stress and strain of GaAs on Si grown by using strained superlattice intermediate layers and a two-step growth method are characterized by the photoluminescence, X-ray diffraction and the curvature radius. The strain of GaAs grown using strained superlattice intermediate layers is smaller than that grown by the two-step growth method.
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- Copyright © Materials Research Society 1987
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