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Heteroepitaxy and Characterisation Of Ge-Rich SiGe Alloys on GaAs

Published online by Cambridge University Press:  28 February 2011

R. Venkatasubramanian ,
M.L. Timmons ,
M. Mantini ,
C.T. Kao  and
N.I. Parikh
R. Venkatasubramanian
Affiliation:
Research Triangle Institute, Research Triangle Park, NC 27709
M.L. Timmons
Affiliation:
Research Triangle Institute, Research Triangle Park, NC 27709
M. Mantini
Affiliation:
Research Triangle Institute, Research Triangle Park, NC 27709
C.T. Kao
Affiliation:
Dept. of Physics and Astronomy, UNC, Chapel Hill, NC 27599
N.I. Parikh
Affiliation:
Dept. of Physics and Astronomy, UNC, Chapel Hill, NC 27599
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Abstract

Growth of SiGe alloys on GaAs substrates at temperatures as low as 590 °C is described. The growth has been accomplished using the pyrolysis of disilane (Si2H6) and Germane (GeH4) at such temperatures. The layers were characterized electrically and show n-type conduction with a carrier concentration of ~ 1 × 1018 cm−3. The high quality of the SiGe layers are evident in the Rutherford backscattering (RBS) channeling results on SiGe/GaAs structures. A Xmin of 5.6% has been obtained for a Si0.05Ge0 95 layer on GaAs. Xmin increases with increasing silicon content in the SiGe layers. The SiGe alloy layers were studied by x-ray diffraction, and the composition was determined assuming coherent, but tetragonally-distorted growth of SiGe on GaAs. The distortion calculations, based on theoretical elastic-constants, were confirmed using Auger electron spectroscopy to check alloy composition.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 198: Symposium V – Epitaxial Heterostructures , 1990 , 547
Copyright
Copyright © Materials Research Society 1990

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References

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