Hostname: page-component-8448b6f56d-42gr6 Total loading time: 0 Render date: 2024-04-24T05:36:05.927Z Has data issue: false hasContentIssue false
  • English
  • Français

Heteroepitaxial growth of ZnO films on Gd3Ga5O12 garnet substrates

Published online by Cambridge University Press:  21 March 2012

Yosuke Ono ,
Hiroaki Matsui  and
Hitoshi Tabata
Yosuke Ono
Affiliation:
Department of Electrical Engineering and Information Systems, the University of Tokyo, Tokyo 113-0032, Japan
Hiroaki Matsui
Affiliation:
Department of Electrical Engineering and Information Systems, the University of Tokyo, Tokyo 113-0032, Japan Department of Bioengineering, the University of Tokyo, Tokyo 113-0032
Hitoshi Tabata
Affiliation:
Department of Electrical Engineering and Information Systems, the University of Tokyo, Tokyo 113-0032, Japan Department of Bioengineering, the University of Tokyo, Tokyo 113-0032
Get access

Abstract

This study focused on structural and optical properties of ZnO films grown epitaxially on Gd3Ga5O12 substrates. ZnO films (a = 3.2439 Å and c = 5.2036 Å) were deposited on the (001) and (111) planes of Gd3Ga5O12 (GGG: a = 12.383 Å) garnet substrates by a pulsed laser deposition method. From out-of-plane and in-plane X-ray diffraction measurements, the obtained ZnO films showed a single phase with the (0001) orientation on the GGG (001) and (111) substrates. The epitaxial relations between the ZnO film and GGG (001) substrate were [10-10] ZnO ‖ [100] GGG and [10-10] ZnO ‖ [010] GGG, while the epitaxial relations between the ZnO film and GGG (111) substrate were [10-10] ZnO ‖ [11-2] GGG ±21°. Furthermore, transmittance electron microscopy revealed sharp interfaces between ZnO films and GGG substrates. From photoluminescent spectra, the ZnO films showed donor bound emissions superimposed with free excitons at a low temperature of 10 K.

Keywords

crystal growthlaser ablationepitaxy
Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 1394: Symposium M – Oxide Semiconductors–Defects, Growth and Device Fabrication , 2012 , mrsf11-1394-m10-02
Copyright
Copyright © Materials Research Society 2012

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

REFERENCES

1. Cherepy, Nerine J., Kuntz, Joshua D., Tillotson, Thomas M., Speaks, Derrick T., Payne, Stephen A., Chai, B. H. T., Porter-Chapmanm, Yetta, Derenzo, Stephen E., nuclear Instruments and Methods in Physics Research A 579 (2007) 38 Google Scholar
2. Harris, Vincent G., Handbook of Magnetic Materials 20 (2012) 1 Google Scholar
3. Lee, Hanju, Kim, Taedong, Kim, Songhui, Yoon, Youngwoon, Kim, Seungwhan, Babajanyan, Arsen, Ishibashi, Takayuki, Friedman, Barry, and Lee, Kiejin, Journal of Magnetism and Magnetic Materials 322 (2010) 2722 Google Scholar
4. Haisma, J., Cox, A.M.W., Koek, B.H., Mateika, D., Pistorius, J.A., and Smeets, E.T.J.M., Journal of Crystal Growth 87 (1988) 180 Google Scholar
5. Haisma, J., Koek, B.H., Maes, J.W.F., Mateika, D., Pistorius, J.A., and Roksnoer, P.J., Journal of Crystal Growth 83 (1987) 466 Google Scholar
6. Ohnishi, T., Ohtomo, A., Ohkuboa, I., Kawasaki, M., Yoshimoto, M., and Koinuma, H., Materials Science and Engineering B56 (1998) 256 Google Scholar
7. Tang, Z. K., Wong, G. K L., Yu, P., Kawasaki, M., Ohtomo, A., Koinuma, H., and Segawa, Y., Applied Physics Letters 72 (1998) 25 Google Scholar
8. Yuk, J. M., No, Y. S., Kim, T. W., Kim, J. Y., and Choi, W. K., Journal of the Korean Physical Society 55 (2009) 246 Google Scholar
9. Gundmann, Marius, Physica Status Solid B 248 No.4 (2011) 805 Google Scholar