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Heating Rate Effects in Rapid Thermal Annealing of Arsenic Implanted Silicon

Published online by Cambridge University Press:  22 February 2011

J.P. de Souza ,
P.F.P. Fichtner  and
D.K. Sadana
J.P. de Souza
Affiliation:
Instituto de Fisica, UFRGS, 91501-970 Porto Alegre, R.S., Brazil
P.F.P. Fichtner
Affiliation:
Escola de Engenharia, UFRGS, 90025-190 Porto Alegre, R.S., Brazil
D.K. Sadana
Affiliation:
Thomas J. Watson Research Center, IBM, Yorktown Heights, N.Y., 10598, USA
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Abstract

Cross section TEM and channeling analysis show that the heating rate (HR) of a rapid thermal annealing (RTA) cycle affects the residual defect distribution in Si implanted with As+ to a heavy dose (≈ 1016 cm−2). Two defect bands are observed after solid phase epitaxial growth (SPEG): the first one centered at a depth corresponding to the projected range of the As (band I), and the second one located at depth corresponding to the original amorphous crystalline (a-c) interface (band II). The density of defects in band I is found to increase with the As dose, and with the annealing temperature (550 - 650°C, furnace annealing). However, for RTA (800 - 1000°C) both the density and depth distribution of these defects are dependent on HR. We propose that Si self-interstitials (SiI) are created at the a-c interface when As becomes substitutional during SPEG. The SPEG velocity determines whether the SiI are accommodated in the amorphous Si layer (low velocities) or are captured by the regrowing c-Si (high velocities)

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 342: Symposium G – Rapid Thermal and Integrated Processing III , 1994 , 351
Copyright
Copyright © Materials Research Society 1994

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References

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