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Heating, Laser Irradiation and Passivation Study on the Light-Emitting Porous Silicon

Published online by Cambridge University Press:  15 February 2011

H. C. Chen ,
W. Wang ,
K. N. Manjularani ,
L. C. Snyder  and
X. L. Zheng
H. C. Chen
Affiliation:
Department of Chemistry, State University of New York at Albany, Albany, NY 12222
W. Wang
Affiliation:
Department of PhysicsState University of New York at Albany, Albany, NY 12222
K. N. Manjularani
Affiliation:
Department of PhysicsState University of New York at Albany, Albany, NY 12222
L. C. Snyder
Affiliation:
Department of Chemistry, State University of New York at Albany, Albany, NY 12222
X. L. Zheng
Affiliation:
Department of PhysicsState University of New York at Albany, Albany, NY 12222
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Abstract

For light-emitting porous Si there has been a severe problem with instability and degradation of the light emission. We report that a stabilization of the emission intensity and the peak energy can be achieved in air by a proper laser irradiation, In-situ photoluminescence measurements were performed to monitor the degradation and stabilization process under different conditions and parameters, such as laser power, laser wavelength and environment (ambient atmosphere of certain gas or ultra high vacuum). We found oxygen is the major cause for the emission degradation in this laser enhanced adsorption process, and the laser heating effect can be excluded. For a comparison we study the reversible thermal heating and quenching process. We also discuss microwave and ECR plasma passivation results.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 256: Symposia AA – Light Emission from Silicon , 1991 , 197
Copyright
Copyright © Materials Research Society 1992

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References

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