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Growth of Uniform InGaAs Bulk Crystal by Multi-Component Zone Melting Method
Published online by Cambridge University Press: 10 February 2011
Abstract
We have developed a Multi-component Zone Melting method to grow a ternary compound crystal which has a uniform composition. A 4.5 mm long InGaAs bulk crystal with a uniform InAs composition of 0.3 has been successfully grown using this method. InGaAlAs/InGaAs strained quantum well lasers were fabricated on an In0. 2Ga0.8As substrate which was grown by this method. A minimum threshold current density of 280 A/cm2 was achieved.
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- Copyright © Materials Research Society 1996
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