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Growth of Thin SiO2 bY “SPIKE” Rapid Thermal Oxidation

Published online by Cambridge University Press:  10 February 2011

A. T. Fiory
A. T. Fiory*
Affiliation:
Bell Laboratories, Lucent Technologies Inc., Murray Hill NJ 07974.
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Abstract

Wafers prepared with HF and RCA cleaning were oxidized at atmospheric pressure O2 with an incandescent-lamp processor using temperature ramping at rates up to 150°C/s for heating and 80°C/s for cooling. The minimum oxidation time obtained by the “spike” method of turning off lamp power prior to reaching a desired peak temperature is effectively 2s. Film thickness for spike oxidation ranges from about 1.6 nm for peak temperature of 1000°C to about 2.2 nm for peak temperature of 1100°C. Activation energies of 2.5 eV are determined for 1.5 – 4 nm films. Films grown for varied times and temperatures to produce equal oxide thickness, as measured by ellipsometry, show nearly equivalent physical properties in measurements by corona-charge and Kelvin probe surface photovoltage techniques.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 567: Symposium R – Ultrathin SiO2 and Higg-K Materials for ULSI Gate Dielectrics , 1999 , 13
Copyright
Copyright © Materials Research Society 1999

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References

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