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Growth of Monocrystalline Cosi2 on Cosi2 Seeds in (100)Si

Published online by Cambridge University Press:  25 February 2011

Karen Maex*
Affiliation:
Interuniversity Microelectronics Center (IMEC v.z.w.) Kapeldreef 75, 3030 Leuven, Belgium
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Abstract

Growth of monocrystalline CoSi2 on top of (100) Si has been obtained by silicidation of deposited Co films on Si/CoSi2/Si heterostructures formed by ion implantation. The layers are of excellent crystalline quality and the CoSi2/Si interface is atomically flat. The required implanted dose can be reduced, since epitaxial silicidation is possible starting from aligned CoSi2 precipitates in the Si.

Type
Research Article
Copyright
Copyright © Materials Research Society 1990

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References

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