Hostname: page-component-8448b6f56d-qsmjn Total loading time: 0 Render date: 2024-04-16T08:10:17.880Z Has data issue: false hasContentIssue false
  • English
  • Français

Growth of InAs and (InAs)1(GaAs)l Superlattice Quantum Well Structures on GaAs by Atomic Layer Epitaxy Using Trimethylindium-Dimethylethylamine Adduct

Published online by Cambridge University Press:  22 February 2011

Nobuyuki Ohtsuka  and
Osamu Ueda
Nobuyuki Ohtsuka
Affiliation:
FUJITSU LABORATORIES LTD., 10-1 Morinosato-Wakamiya, Atsugi 243-01, Japan
Osamu Ueda
Affiliation:
FUJITSU LABORATORIES LTD., 10-1 Morinosato-Wakamiya, Atsugi 243-01, Japan
Get access

Abstract

Atomic layer epitaxy (ALE) of InAs has been developed using trimethylindium-dimethylethylamine adduct (TMIDMEA) as a novel In source. Distinct self-limiting growth of InAs was successfully carried out over a wide temperature range from 350°C to 500°C because of the high thermal stability of TMIDMEA. The possible growth temperature range for ALE-InAs was extended by using TM1DMEA. These results lead us to conclude that the use of TMIDMEA enables us to grow InAs/GaAs heterostructures at a single growth temperature. Using this technique, (InAs)1(GaAs)l short period superlattice (12 periods) quantum-well structures were grown on a GaAs(100) substrate at 460°C. A photoluminescence peak at 1.3 µm was observed in these structures at room temperature.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 334: Symposium W – Gas-Phase and Surface Chemistry in Electronic Materials Processing , 1993 , 225
Copyright
Copyright © Materials Research Society 1994

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

1. Roan, E. J. and Cheng, K. Y., Appl. Phys. Lett. 59, 2688 (1991).CrossRefGoogle Scholar
2. Dutta, N. K., Chand, N., Lopata, J. and Wetzel, R., Appl. Phys. Lett. 60, 924 (1992).CrossRefGoogle Scholar
3. Ozeki, M., Mochizuki, K., Ohtsuka, N., and Kodama, K., Appl. Phys. Lett. 53, 1509 (1988).CrossRefGoogle Scholar
4. Ozeki, M., Mochizuki, K., Ohtsuka, N., and Kodama, K., Thin Solid Films 174, 63 (1989).CrossRefGoogle Scholar
5. Sakuma, Y., Kodama, K. and Ozeki, M., Japan. J. Appl. Phys. Lett. 27, L2189 (1988).CrossRefGoogle Scholar
6. Ozeki, M., Ohtsuka, N., Sakuma, Y. and Kodama, K., J. Cryst. Growth 107, 102 (1991).CrossRefGoogle Scholar
7. Mori, K. and Usui, S., Appl. Phys. Lett. 60, 1717 (1992).CrossRefGoogle Scholar
8. Westwood, D. I., Woolf, D. A. and Williams, R. H., J. Cryst. Growth 98, 782 (1989).CrossRefGoogle Scholar
9. Olsthoorm, S. M., Driessen, F. A. J. M. and Giling, L. J., Appl. Phys. Lett. 60, 82 (1992).CrossRefGoogle Scholar
10. Sakuma, Y., Ozeki, M. and Nakajima, K., J. Cryst. Growth 130, 147 (1993).CrossRefGoogle Scholar
11. Roan, E. J., Cheng, K. Y., Pearah, P. J., Liu, X., Hsieh, K. C. and Bishop, S. G., Inst. Phys. Conf. Ser. 120, 577 (1991).Google Scholar