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Growth of High Quality Poly-SiGe on Glass Substrates

Published online by Cambridge University Press:  15 February 2011

Kunihiro Shiota ,
Daisuke Inoue ,
Kouichirou Minami ,
Masaji Yamamoto  and
Jun-ichi Hanna
Kunihiro Shiota
Affiliation:
Electronic Component Development Div., NEC Corp., Kawasaki 221, Japan
Daisuke Inoue
Affiliation:
Imaging Science & Engineering Lab., Tokyo Institute of Technology, Yokohama 226, Japan
Kouichirou Minami
Affiliation:
Imaging Science & Engineering Lab., Tokyo Institute of Technology, Yokohama 226, Japan
Masaji Yamamoto
Affiliation:
Imaging Science & Engineering Lab., Tokyo Institute of Technology, Yokohama 226, Japan
Jun-ichi Hanna
Affiliation:
Imaging Science & Engineering Lab., Tokyo Institute of Technology, Yokohama 226, Japan
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Abstract

The composition variation and strutural properties of poly-SiGe thin films were investigated by Reactive Thermal CVD with Si2H6 and GeF4. Deposition of the films was carried out at a low temperature of 450°C on oxidized silicon substrates using different growth parameters, i.e., the source gas flow ratio (Si2H6/ GeF4) and thegas flow rate. The structural profiles of as-deposited films were characterized by X-ray diffraction (XRD) and Raman scattering spectroscopies, scanning electron microscopy (SEM) and transmission electron microscopy (TEM).

All these films show (220) preferential orientation. The mole fractions of Si in poly-SixGe1−x films were estimated to be from 0.95 to 0.05 for x by using Vegard's law for the XRD peaks. TEM observation revealed that high crystallinity was well established even in poly-Si0.95Ge0.05 films owing to the direct nucleation on the substrate surface.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 452 , 1996 , 1001
Copyright
Copyright © Materials Research Society 1997

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References

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