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Growth of AlGaAs/GaAs Modfet Structures by Gsmbe Using Triethylalkyls and Arsine

Published online by Cambridge University Press:  28 February 2011

Yu-Min Houng ,
Yi-Ching Pao  and
Paul Mcleodl
Yu-Min Houng
Affiliation:
Hewlett-Packard Labs, Palo Alto, CA 94304
Yi-Ching Pao
Affiliation:
III-V Device Center, Varian Associates, Santa Clara, CA 95054
Paul Mcleodl
Affiliation:
MBE Equipment Operation, Varian Associates, Santa Clara, CA 95054
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Abstract

We have grown high quality AlGaAs/GaAs heterostructures by GSMBE, using triethylalkyls and arsine, for MODFET device applications. Al.28Ga.72As/GaAs modulation-doped structures with moblilities as high as 7,200 and 47,000 cm2/V-s at 300 and 77K, respectively, were obtained for a spacer layer thickness of 30Å and a sheet carrier concentration of l×l012cm−2. These results are comparable to films of a similar structure grown by elemental source MBE or by OMVPE techniques. Quarter-micron gate length MODFETs fabricated from this material have fr greater than 38 GHz and exhibit a 1.7 dB noise figure with 10 dB associated gain at 18 GHz when operated at room temperature.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 145: Symposium A – III-V Heterostructures for Electronic/Photonic Devices , 1989 , 63
Copyright
Copyright © Materials Research Society 1989

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