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Growth Morphology of Ag Islands on GaAs (110) at Low Coverage: Monte Carlo Simulations

Published online by Cambridge University Press:  21 February 2011

Ashok Challa ,
Timothy S. Cale  and
Jeff Drucker
Ashok Challa
Affiliation:
Center for Solid State Science, Arizona State University, Tempe, AZ 85287–1704
Timothy S. Cale
Affiliation:
Center for Solid State Electronics Research, Arizona State University, Tempe, AZ 85287–6206
Jeff Drucker
Affiliation:
Department of Physics, University of Texas at El Paso, El Paso, TX 79968–0515
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Abstract

The growth morphology of Ag on GaAs (110) surface, at low coverage, is investigated with Monte Carlo simulations using a solid-on-solid model. Experimentally Ag deposited at room temperature forms isotropie islands and forms islands elongated along the <110> direction when deposited at 250°C. The preliminary results from our Monte Carlo simulations indicate that anisotropy in the surface migration and near-neighbor interactions are the main factors for the elongated islands observed for depositions performed at 250°C.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 355: Symposium B1 – Evolution of Thin-Film and Surface Structure and Morphology , 1994 , 101
Copyright
Copyright © Materials Research Society 1995

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References

REFERENCES

1. Cao, R., Miyano, K., Lindau, I. and Spicer, W. E., J. Vac. Sci. Technol., A 7, 1975 (1989).Google Scholar
2. Shitara, T., Vvedensky, D. D. and Wilby, M. R., Phys. Rev. B, 46, 6825 (1992).Google Scholar
3. Liu, Shudun, Zhang, Zhenya, Comsa, George and Metiu, Horia, Phys. Rev. Lett., 71, 2967 (1993).Google Scholar
4. Trafas, B. M., Yang, Y. N., Siefert, R. L. and Weaver, J. H., Phys. Rev. B, 43, 14107 (1991).Google Scholar
5. Drucker, Jeff and Krishnamurthy, Mohan, Microstructural Evolution of Ag/GaAs (110), this volume.Google Scholar