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Growth Mechanism of Microcrystalline Silicon Deposited by ECRCVD

Published online by Cambridge University Press:  15 February 2011

I. Beckers ,
E. Conrad ,
P. Müller ,
N. H. Nickel ,
I. Sieber  and
W. Fuhs
I. Beckers
Affiliation:
Hahn-Meitner-Institut, Rudower Chaussee 5, 12489 Berlin, F. R., Germany
E. Conrad
Affiliation:
Hahn-Meitner-Institut, Rudower Chaussee 5, 12489 Berlin, F. R., Germany
P. Müller
Affiliation:
Hahn-Meitner-Institut, Rudower Chaussee 5, 12489 Berlin, F. R., Germany
N. H. Nickel
Affiliation:
Hahn-Meitner-Institut, Rudower Chaussee 5, 12489 Berlin, F. R., Germany
I. Sieber
Affiliation:
Hahn-Meitner-Institut, Rudower Chaussee 5, 12489 Berlin, F. R., Germany
W. Fuhs
Affiliation:
Hahn-Meitner-Institut, Rudower Chaussee 5, 12489 Berlin, F. R., Germany
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Abstract

Microcrystalline silicon (μc-Si) films were prepared by electron cyclotron resonance assisted chemical vapor deposition (ECRCVD) using helium, argon and hydrogen dilution. The crystalline fraction was estimated from Raman backscattering spectra and scanning electron-microscopy (SEM) was used to obtain information on roughness and homogeneity of the films. For hydrogen dilution the highest crystallinity (Xc = 85 %) occurs at a ratio of ΔH = [H2]/([H2]+[SiH4])= 0.98. At the same time the deposition rate decreases continuously with increasing H2 dilution. These results are consistent with the idea that H etching promotes the growth of μc-Si. At ΔH > 0.98 a Xc decreases due to a H mediated transition of small crystallites into amorphous tissue. The implications of these results for the growth mechanisms are discussed.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 452 , 1996 , 773
Copyright
Copyright © Materials Research Society 1997

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References

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