Hostname: page-component-8448b6f56d-m8qmq Total loading time: 0 Render date: 2024-04-23T14:36:26.141Z Has data issue: false hasContentIssue false
  • English
  • Français

Growth Kinetics and Corresponding Luminescence Characteristics of Amorphous C:H Deposited from Ch4 by Dc Saddle-Field Plasma-Assisted Cvd

Published online by Cambridge University Press:  22 February 2011

Roman V. Kruzelecky ,
Chun Wang  and
Stefan Zukotynski
Roman V. Kruzelecky
Affiliation:
University of Toronto, Department of Electrical and Computer Engineering, Toronto, Ontario, Canada, M5S 1A4
Chun Wang
Affiliation:
University of Toronto, Department of Electrical and Computer Engineering, Toronto, Ontario, Canada, M5S 1A4
Stefan Zukotynski
Affiliation:
University of Toronto, Department of Electrical and Computer Engineering, Toronto, Ontario, Canada, M5S 1A4
Get access

Abstract

Hydrogenated amorphous carbon (a-C:H) thin films were deposited onto various substrates at 200 °C by DC saddle-field glow-discharge dissociation of CH4. In situ plasma probe mass and energy spectroscopy was employed to systematically study the effects of the discharge parameters on the formation of reactive precursors. The ion current at the substrate holder consists mainly of CH3+ for pressures < 75 mTorr; higher pressures and lower discharge currents encourage the formation of C2Hn+ and C3Hn+ radicals in the discharge. The growth rate was largely independent of the total pressure, increasing approximately linearly with the discharge current. Under 476 nm photo-excitation, the a-C:H films exhibited room-temperature photoluminescence in the visible, near 1.9 eV, with an intensity that was strongly dependant on the discharge parameters.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 334: Symposium W – Gas-Phase and Surface Chemistry in Electronic Materials Processing , 1993 , 537
Copyright
Copyright © Materials Research Society 1994

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

references

1. Whitmell, D.S. and Williamson, R., Thin Solid Films, 35, 255 (1976).CrossRefGoogle Scholar
2. Anderson, D.A., Phil. Mag., 35, 17 (1977).CrossRefGoogle Scholar
3. Meyerson, B. and Smith, F.W., J. Non-Cryst. Solids, 35&36, 435 (1980).CrossRefGoogle Scholar
4. Hamakawa, Y., Toyama, T. and Okamoto, H., J. Non-Cryst. Solids, 115, 180 (1989),CrossRefGoogle Scholar
5. Shimozuma, M., Tochitani, U., Ohno, H., Tagashira, H. and Nakahara, J., J. Appl. Phys., 66, 447 (1989).CrossRefGoogle Scholar
6. Kruzelecky, R.V. and Zukotynski, S., “DC Saddle-Field Plasma-Enhanced Vapour Deposition” in Plasma Processing of Materials, editors Pouch, J.J. and Alterovitz, S. (Trans Tech Publications, Ltd., Aedermannsdorf, Switzerland) in press.CrossRefGoogle Scholar
7. Colthup, N.B., Daly, L.H. and Wiberly, S.E., Introduction to Infrared and Raman Spectroscons, 2nd ed. (Academic Press, New York, 1975) pp. 190–340.Google Scholar