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Growth and Characterization of ZnSe/ZnCdSe Diode Structures on (In, Ga)As Buffer Layers
Published online by Cambridge University Press: 25 February 2011
Abstract
ZnSe/ZnCdSe diode structures were grown on (In, Ga)As buffer layers by molecular beam epitaxy. Lattice distortions and defect distributions in buffer layers and diode structures were examined by X-ray diffraction and transmission electron microscopy. Diode structrues with low dislocation densities were obtained by the growth on tetragonally distorted In0.043 Ga0.957 buffer layers, the lattice spacing of which is slightly smaller than that of ZnSe.
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- Copyright © Materials Research Society 1992
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