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Growth and Characterization of the Binary Defect Alloy Cu2-xSe and the Relation to II–VI/I–III–VI Heterojunction Formation

Published online by Cambridge University Press:  26 February 2011

Art J. Nelson ,
K. Sinha  and
John Moreland
Art J. Nelson
Affiliation:
National Renewable Energy Laboratory, 1617 Cole Blvd., Golden, CO 80401
K. Sinha
Affiliation:
National Renewable Energy Laboratory, 1617 Cole Blvd., Golden, CO 80401
John Moreland
Affiliation:
National Institute of Standards and Technology, Boulder, CO 80303
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Abstract

Synchrotron radiation soft x-ray photoemission spectroscopy was used to investigate the development of the electronic structure at the CdS/Cu2Se heterojunction interface. Cu2−xSe layers were deposited on GaAs (100) by molecular beam epitaxy from Cu2Se sources. Raman spectra reveal a strong peak at 270 cm−1, indicative of the Cu2−xSe phase. Atomic force microscopy reveals uniaxial growth in a preferred (100) orientation. CdS overlayers were then deposited in-situ, at room temperature, in steps on these epilayers. Photoemission measurements were acquired after each growth in order to observe changes in the valence band electronic structure as well as changes in the Se3d and Cd4d core lines. The results were used to correlate the interfacial chemistry with the electronic structure and to directly determine the CdS/Cu2−xSe and heterojunction valence band discontinuity and the consequent heterojunction band diagram. These results are compared to the valence band offset (ΔEv) for the CdS/CuInSe2 heterojunction interface.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 378: Symposium B – Defect and Impurity-Engineered Semiconductors and Devices , 1995 , 249
Copyright
Copyright © Materials Research Society 1995

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