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Growth and characterization of InAs quantum dots on GaAs (100) emitting at 1.31μm.

Published online by Cambridge University Press:  01 February 2011

V. Celibert ,
B. Salem ,
G. Guillot ,
C. Bru-Chevallier ,
L. Grenouillet ,
P. Duvaut ,
P. Gilet  and
A. Million
V. Celibert
Affiliation:
LPM, INSA de Lyon, UMR-CNRS-5511, Bat. Blaise Pascal, 7 avenue Jean Capelle 69621 VILLEURBANNE CEDEX, France. CEA-DRT-LETI/DOPT - CEA/GR - 17 rue des Martyrs 38054 GRENOBLE CEDEX 9 -, France.
B. Salem
Affiliation:
LPM, INSA de Lyon, UMR-CNRS-5511, Bat. Blaise Pascal, 7 avenue Jean Capelle 69621 VILLEURBANNE CEDEX, France.
G. Guillot
Affiliation:
LPM, INSA de Lyon, UMR-CNRS-5511, Bat. Blaise Pascal, 7 avenue Jean Capelle 69621 VILLEURBANNE CEDEX, France.
C. Bru-Chevallier
Affiliation:
LPM, INSA de Lyon, UMR-CNRS-5511, Bat. Blaise Pascal, 7 avenue Jean Capelle 69621 VILLEURBANNE CEDEX, France.
L. Grenouillet
Affiliation:
CEA-DRT-LETI/DOPT - CEA/GR - 17 rue des Martyrs 38054 GRENOBLE CEDEX 9 -, France.
P. Duvaut
Affiliation:
CEA-DRT-LETI/DOPT - CEA/GR - 17 rue des Martyrs 38054 GRENOBLE CEDEX 9 -, France.
P. Gilet
Affiliation:
CEA-DRT-LETI/DOPT - CEA/GR - 17 rue des Martyrs 38054 GRENOBLE CEDEX 9 -, France.
A. Million
Affiliation:
CEA-DRT-LETI/DOPT - CEA/GR - 17 rue des Martyrs 38054 GRENOBLE CEDEX 9 -, France.
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Abstract

Self-organized InAs quantum dots (QDs) were grown in the Stranski-Krastanov regime, by gas-source molecular beam epitaxy (GSMBE), on (100) GaAs substrates. Two important parameters have been optimized in order to grow high quality QDs with a very good reproducibility: InAs growth rate and GaAs cap layer deposition rate. Atomic force microscopy (AFM) analysis shows a unimodal QD distribution and the room temperature photoluminescence (RTPL) spectrum of the optimized sample reveals a 1.3 μm emission with a 19 meV full width at half maximum (FWHM). Photoluminescence (PL) measurements versus excitation power density and photoluminescence excitation (PLE) measurements clearly show multi-component PL emission from transitions associated with fundamental and related excited states of QDs. Furthermore a good growth reproducibility is observed. The results are promising for further work which will lead to laser fabrication.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 794: Symposium T – Self-Organized Processes in Semiconductor Heteroepitaxy , 2003 , T7.8/Z7.8
Copyright
Copyright © Materials Research Society 2004

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References

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