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Growth and Characterization of Erbium Silicides Synthesized by Metal Vapor Vacuum Arc Ion Implantation

Published online by Cambridge University Press:  17 March 2011

X. W. Zhang ,
W. Y. Cheung  and
S. P. Wong
X. W. Zhang
Affiliation:
Department of Electronic Engineering, The Chinese University of Hong Kong, Shatin, N. T., Hong Kong, P. R. China
W. Y. Cheung
Affiliation:
Department of Electronic Engineering, The Chinese University of Hong Kong, Shatin, N. T., Hong Kong, P. R. China
S. P. Wong
Affiliation:
Department of Electronic Engineering, The Chinese University of Hong Kong, Shatin, N. T., Hong Kong, P. R. China
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Abstract

Erbium atoms were implanted into p-type Si (111) wafers at an extraction voltage of 60 kV to doses ranging from 5×1016 to 2×1017 cm−2 using a metal vapour vacuum arc (MEVVA) ion source. The implantation was performed with beam current densities from 3 to 26 µA/cm2 corresponding to substrate temperatures ranging from 85 to 245°C. The characterization of the as-implanted and annealed samples was performed using Rutherford backscattering spectrometry, atomic force microscopy and x-ray diffraction. To determine the sputtering yield, masked implantation experiments were performed so that the thickness of the sputtered layer at different substrate temperatures can be obtained directly by an α-step surface profiler. The results showed that ErSi2-xwas directly formed by MEVVA implantation when the substrate temperature was higher than about 160°C. The effects of the implant dose and the beam current density on the retained dose, the sputtering yield and the surface morphology of the implanted samples were also studied.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 647: Symposium O – Ion Beam Synthesis & Processing of Advanced Materials , 2000 , O11.27
Copyright
Copyright © Materials Research Society 2001

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