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Growth and Characterization of 2″ 6H-Silicon Carbide

Published online by Cambridge University Press:  10 February 2011

Erwin Schmitt ,
Robert Eckstein ,
Martin Kölbl  and
Amd-Dietrich Weber
Erwin Schmitt
Affiliation:
SiCrystal AG, Heinrich-Hertz-Platz 2, 92275 Eschenfelden, Germany, e.schmitt@sicrystal.com
Robert Eckstein
Affiliation:
SiCrystal AG, Heinrich-Hertz-Platz 2, 92275 Eschenfelden, Germany, e.schmitt@sicrystal.com
Martin Kölbl
Affiliation:
SiCrystal AG, Heinrich-Hertz-Platz 2, 92275 Eschenfelden, Germany, e.schmitt@sicrystal.com
Amd-Dietrich Weber
Affiliation:
SiCrystal AG, Heinrich-Hertz-Platz 2, 92275 Eschenfelden, Germany, e.schmitt@sicrystal.com
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Abstract

For the growth of 2″ 6H-SiC a sublimation growth process was developed. By different means of characterization crystal quality was evaluated. Higher defect densities, mainly in the periphery of the crystals were found to be correlated to unfavourable process conditions. Improvement of thermal boundary conditions lead to a decreased defect density and better homogeneity over the wafer area.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 572: Symposium Y – Wide-Bandgap Semiconductors for High-Power, High Frequency… , 1999 , 271
Copyright
Copyright © Materials Research Society 1999

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References

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