Hostname: page-component-7c8c6479df-995ml Total loading time: 0 Render date: 2024-03-19T06:13:47.887Z Has data issue: false hasContentIssue false

Growth and Characteristics of a-Plane GaN/ZnO/GaN Heterostructure

Published online by Cambridge University Press:  23 April 2013

Chiao-Yun Chang
Affiliation:
Department of Photonics & Institute of Electro-Optical Engineering, National Chiao Tung University, 1001 University Road, Hsinchu 30050, Taiwan
Huei-Min Huang
Affiliation:
Department of Photonics & Institute of Electro-Optical Engineering, National Chiao Tung University, 1001 University Road, Hsinchu 30050, Taiwan
Yu-Pin Lan
Affiliation:
Department of Photonics & Institute of Electro-Optical Engineering, National Chiao Tung University, 1001 University Road, Hsinchu 30050, Taiwan
Tien-Chang Lu*
Affiliation:
Department of Photonics & Institute of Electro-Optical Engineering, National Chiao Tung University, 1001 University Road, Hsinchu 30050, Taiwan
Hao-Chung Kuo
Affiliation:
Department of Photonics & Institute of Electro-Optical Engineering, National Chiao Tung University, 1001 University Road, Hsinchu 30050, Taiwan
Shing-Chung Wang
Affiliation:
Department of Photonics & Institute of Electro-Optical Engineering, National Chiao Tung University, 1001 University Road, Hsinchu 30050, Taiwan
Li-Wei Tu*
Affiliation:
Department of Physics, National Sun Yat-Sen University, Kaohsiung 80424, Taiwan
Wen-Feng Hsieh
Affiliation:
Department of Photonics & Institute of Electro-Optical Engineering, National Chiao Tung University, 1001 University Road, Hsinchu 30050, Taiwan
Get access

Abstract

The crystal structure of a-plane GaN/ZnO heterostructures on r-plane sapphire was investigated by using the XRD and TEM measurment. It was found the formation of (220) ZnGa2O4 and crystal orientation of semipolar (10$\bar 1$3) GaN at GaN/ZnO interface. The epitaxial relation of normal surface direction are the sapphire (1$\bar 1$02) // a-GaN (11$\bar 2$0) and ZnGa2O4 (220) // semi-polar GaN (10$\bar 1$$\bar 3$). Beside, the emission peak energy of ZnO appears shift about 60 meV in the GaN/ZnO/GaN heterostructures due to the re-crystallization of ZnO layer with Ga or N atom and the formation of the localized state.

Type
Articles
Copyright
Copyright © Materials Research Society 2013 

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

Auret, F.D., Goodman, S., Legodi, M., Meyer, W.E., Look, D., Applied physics letters, 80, 1340 (2002).CrossRefGoogle Scholar
Xu, H., Liu, Y., Liu, Y., Xu, C., Shao, C., Mu, R., Applied Physics B: Lasers and Optics, 80, 871 (2005).CrossRefGoogle Scholar
Kumar, M., Kim, T.H., Kim, S.S., Lee, B.T., Applied physics letters, 89, 112103–1 (2006).CrossRefGoogle Scholar
Gorbatenko, L., Novodvorsky, O., Panchenko, V.Y., Khramova, O., Cherebilo, Y.A., Lotin, A., Wenzel, C., Trumpaicka, N., Bartha, J., Laser physics, 19, 1152 (2009).CrossRefGoogle Scholar
Baker, T.J., Haskell, B.A., Wu, F., Fini, P.T., Speck, J.S., Nakamura, S., Japanese journal of applied physics, 44, L920 (2005).CrossRefGoogle Scholar