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Grain Expansion and Subsequent Seeded Growth of AlN Single Crystals

Published online by Cambridge University Press:  01 February 2011

Dejin Zhuang ,
Raoul Schlesser  and
Zlatko Sitar
Dejin Zhuang
Affiliation:
Department of Materials Science and Engineering, North Carolina State University Raleigh, NC 27695–7907, U.S.A.
Raoul Schlesser
Affiliation:
Department of Materials Science and Engineering, North Carolina State University Raleigh, NC 27695–7907, U.S.A.
Zlatko Sitar
Affiliation:
Department of Materials Science and Engineering, North Carolina State University Raleigh, NC 27695–7907, U.S.A.
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Abstract

Ongoing efforts of growing large AlN single crystals at NCSU using an induction-heated, high-temperature reactor are based on (1) engineered expansion of single crystalline grains with increasing boule length, as well as (2) the development of a growth process that enables seeded growth on AlN surfaces previously exposed to air. The growth process is based on physical vapor transport (PVT), where AlN powder is sublimed in a high purity nitrogen atmosphere. The growth temperature was typically in the range of 2250 to 2300 °C. In this study, tungsten crucibles were used in combination with graphite insulation and were found to be durable for AlN growth. Boule growth was interrupted several times in order to refill the AlN powder source and the growth surface was subjected to surface preparation to facilitate epitaxial re-growth. Grain expansion was studied as a function of process parameters. Crystalline quality of large single crystalline grains was correlated with their surface morphology.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 831: Symposium E – GaN, AlN, InN, and Their Alloys , 2004 , E11.1
Copyright
Copyright © Materials Research Society 2005

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References

REFERENCE

1. Schlesser, R., Dalmau, R., and Sitar, Z., J. Cryst. Growth, 241, 416 (2002)Google Scholar
2. Gaska, R., Chen, C., Yang, J., Kuokstis, E., Khan, A., Tamulaitis, G., Yilmaz, I., Shur, M. S., Rojo, J. C., and Schowalter, L. J., Appl. Phys. Lett., 81, 4658 (2002)Google Scholar
3. Hu, X., Deng, J., Pala, N., Gaska, R., Shur, M. S., Chen, C. Q., Yang, R., Simin, G., Khan, M. A., Rojo, J. C., and Schowalter, L. J., Appl. Phys. Lett., 82, 1299 (2003)Google Scholar
4. Liu, L. and Edgar, J. H., J. Cryst. Growth, 220, 243, (2000)Google Scholar
5. Wu, B., Ma, R., Zhang, H., Dudley, M., Schlesser, R., and Sitar, Z., J. Cryst. Growth, 253, 326 (2003)Google Scholar
6. Liu, L. and Edgar, J. H., Mater. Sci. Eng. R, 37, 61 (2002)Google Scholar
7. Mokhov, E., Smitnov, S., Segal, A., Bazarevskiy, D., Makarov, Y., Ramm, M., and Helava, H., Mater. Sci. Forum, 457–460, 1545 (2004)Google Scholar
8. Noveski, V., Schlesser, R., Freitas, J. Jr, Mahajan, S., Beaudoin, S., and Sitar, Z., Mat. Res. Soc. Symp. Proc., 798, Y2.8 (2004)Google Scholar
9. Toth, L. E., “Transition Metal of Carbides and Nitrides”, pp. 13, New York, Academic Press (1971)Google Scholar
10. Epelbaum, B., Hofmann, D., Bickermann, M., and Winnacker, A., Mater. Sci. Forum, 389–393, 1445 (2002)Google Scholar
11. Slack, G. A., Whitlock, J., Morgan, K., and Schowalter, L. J., Mat. Res. Sco. Symp. Proc., 798, Y10.74 (2004)Google Scholar