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The Geometry of Amorphous Silicon Effect on Metal Induced Lateral Crystallization Rate

Published online by Cambridge University Press:  01 February 2011

Y.-S. Kim ,
M.-S. Kim  and
S.-K. Joo
Y.-S. Kim
Affiliation:
School of Materials Science and Engineering, College of Engineering, Seoul National University, Seoul 151–742, Korea
M.-S. Kim
Affiliation:
School of Materials Science and Engineering, College of Engineering, Seoul National University, Seoul 151–742, Korea
S.-K. Joo
Affiliation:
School of Materials Science and Engineering, College of Engineering, Seoul National University, Seoul 151–742, Korea
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Abstract

In this study, we observed that the MILC behavior changed when the amorphous silicon active pattern width was changed abruptly and explain that phenomena with novel MILC mechanism model. The 10nm thick Ni layers were deposited on glass substrate that has various amorphous silicon patterns on it. Then we annealed the sample at 550 °C with RTA (rapid thermal annealing) machine and measured the crystallized length with optical microscope. The MILC rate was reduced dramatically and stopped for several hours (incubation time). After the incubation time, the MILC started again and the incubation time increased as the amorphous silicon pattern width difference getting larger. We can explain these phenomena with the tensile stress that was caused by volume shrinkage due to the phase transform from amorphous silicon to crystalline silicon.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 854: Symposium U – Stability of Thin Films and Nanostructures , 2004 , U8.15
Copyright
Copyright © Materials Research Society 2005

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References

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