Hostname: page-component-8448b6f56d-wq2xx Total loading time: 0 Render date: 2024-04-20T00:40:57.504Z Has data issue: false hasContentIssue false
  • English
  • Français

A Generalized Model of the Yield Drop for Impure Semiconductors

Published online by Cambridge University Press:  14 March 2011

Boris V. Petukhov
Boris V. Petukhov*
Affiliation:
Institute of Crystallography, Russian Academy of Sciences, Leninskii pr. 59, Moscow, 117333, Russia
Get access

Abstract

The Alexander-Haasen theory describing the deformation behavior of low-dislocated semiconductor crystals is generalized taking into account the dynamic ageing of dislocations due to the impurities dragging. The constitutive equations describing kinetics of the plastic deformation are modified for the case of a spectrum of age-dependent internal stresses. Besides the solution hardening, the theory developed explains a number of qualitative distinctions of the elastic-plastic transition in silicon crystals grown by the Czochralski and the float zone methods. Particularly, this concerns a dependence of the yield drop on the initial dislocation density, and a weakening of the strain rate sensitivity of the yield stress.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 683: Symposium BB – Materials Instabilities and Patterning in Metals , 2001 , BB3.3.1
Copyright
Copyright © Materials Research Society 2001

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

REFERENCES

1. Alexander, H., Haasen, P.. Solid State Physics 22, 27 (1968).Google Scholar
2. Alexander, H.. In: Dislocations in solids, ed. by Nabarro, F. R. N. (Amsterdam-Oxford-N.Y.-Tokyo, North-Holland, 1986) v. 7, chapt. 35, p. 113.Google Scholar
3. Johnston, W. G., Gilman, J. J.. J. Appl. Phys., 30, 129 (1959).Google Scholar
4. Estrin, Y. and Kubin, L. P.. In: Continuum Models for Materials with Micro-Structure, ed. by Mulhaus, H.-B. (New York, Wiley & Sons, Ltd., 1995) p. 395.Google Scholar
5. Zaiser, M., Hähner, P.. Physica status solidi (b). 199, 267 (1997).Google Scholar
6. Sumino, K., Imai, M.. Phil. Mag., A47, 753 (1983).Google Scholar
7. Petukhov, B. V.. Semiconductors 35, (2001) (in press).Google Scholar
8. Sumino, K., Yonenaga, I., Harada, H.. Jap. J. Appl. Phys. 51 (1), 217 (1980).Google Scholar
9. Siethoff, H., Haasen, P.. Lattice Defects in Semiconductors, ed. by Hasiguti, R. (Tokyo Univ. Press, Tokyo, 1968) p. 491.Google Scholar