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Ge Transport and Epitaxy on [111] Si in the Ge/Pd2Si/Si System

Published online by Cambridge University Press:  28 February 2011

Q. Z. Hong ,
J. G. Zhu ,
W. Xia  and
J. W. Mayer
Q. Z. Hong
Affiliation:
Department of Materials Science and Engineering, Cornell University, Ithaca, NY 14853
J. G. Zhu
Affiliation:
Department of Materials Science and Engineering, Cornell University, Ithaca, NY 14853
W. Xia
Affiliation:
Department of Electrical Engineering and Computer Sciences, University of California, San Diego, La Jolla, CA 92093
J. W. Mayer
Affiliation:
Department of Materials Science and Engineering, Cornell University, Ithaca, NY 14853
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Abstract

Solid phase epitaxy in the amorphous(a)-Ge/Pd2Si/Si system has been investigated in the temperature range of 600 to 750 °C. The top Ge started to migrate into the suicide layer at 600 °C. After longer time annealing the mixed Ge released from the suicide matrix and formed a laterally uniform epitaxial Ge70Si30 layer on the [111] Si substrate. A minimum yield of 0.1 was achieved for a 800 Å-thick Ge70Ge30 layer.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 160 , 1989 , 313
Copyright
Copyright © Materials Research Society 1990

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