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Gasochromic and electrical properties of Pt-nanoparticle-dispersed tungsten oxide thin films prepared by a sol-gel process

Published online by Cambridge University Press:  06 March 2012

Yuki Yamaguchi ,
Keishi Nishio  and
Tohru Kineri
Yuki Yamaguchi
Affiliation:
Department of Materials Science and Technology, Tokyo University of Science, 2641 Yamazaki, Noda-shi, Chiba 278-8510, Japan
Keishi Nishio
Affiliation:
Department of Materials Science and Technology, Tokyo University of Science, 2641 Yamazaki, Noda-shi, Chiba 278-8510, Japan
Tohru Kineri
Affiliation:
Department of Applied Chemistry, Tokyo University of Science, Yamaguchi, 1-1-1 Daigaku-Dori, SanyoOnoda-shi, Yamaguchi 756-0884, Japan
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Abstract

It is well known that tungsten tri-oxide (WO3) exhibits electrochromic and gasochromic properties. When Pt-nanoparticle-dispersed tungsten oxide (Pt-WO3) is exposed to hydrogen gas, the optical and electrical properties of the Pt-WO3 change drastically. Consequently, it is expected that thin films of WO3 can be applied as hydrogen gas leakage sensors. In this study, thin films of Pt-WO3 were prepared on glass substrates using a sol-gel process. The optical and electrical properties of the films were evaluated. Amorphous and crystalline WO3 were easily obtained by changing the heat-treatment temperature. The ion diffusion coefficient of the film depended on the WO3 structure (i.e., whether it was amorphous or crystalline) because the density of amorphous WO3 is lower than that of crystalline WO3. Films with low crystallinity were found to have superior chromic properties to both those with high crystallinity and amorphous films. Thin films of Pt-WO3 prepared at 673K showed the largest change in optical transmittance and electrical conductivity when exposed to H2 gas compared with thin films prepared at other temperatures. When this film was exposed to 100% H2 gas, the normalized transmittance decreased rapidly (in less than 0.2 sec) from 100% to almost 50%. The optical absorbance of the film was dependent on the H2 gas concentration (mixed with N2 gas) in the range from 0.1 to 5% and the relationship between them was linear. The relationship between the electrical conductivity and hydrogen gas concentration (mixed with N2 gas) in the range from 100 to 10000ppm was also linear.

Keywords

oxidesol-gelthin film
Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 1400: Symposium S – Solution Processing of Inorganic and Hybrid Materials for Electronics and Photonics , 2012 , mrsf11-1400-s06-12
Copyright
Copyright © Materials Research Society 2012

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References

REFERENCES

1. Deb, S.K., Philos. Mag. 27, 801–22 (1973)Google Scholar
2. Deb, S.K., Phys. Rev. B 16, 1020–24 (1977)Google Scholar
3. Yamaguchi, Y., Kineri, T., Fujimoto, M., Mae, H., Yasumori, A., Nishio, K., Key Eng. Mater. 485, 271–274 (2011)Google Scholar
4. Hsu, W.C., Chan, C.C., Peng, C.H., Chang, C.C., Thin Solid Films 516, 407–411 (2007)Google Scholar
5. Krasovec, U., Orel, B., Georg, A. and Wittner, V., Solar Energy 68, 541–551 (2000)Google Scholar
6. Sekimoto, S., Nakagawa, H., Okazaki, S., Fukuda, K., Asakura, S., Shigemori, T., Takahashi, S., Sens. Actuators, B, Chem. 66, 142–145 (2000)Google Scholar
7. Lee, D.S., Nam, K.H., Lee, D.D., Thin Solid Films 375, 142–146 (2000)Google Scholar
8. Yaacob, M.H., Breedon, M., Kalantar-zadeh, K., Wlodarski, W., Sens. Actuators, B, Chem. 137, 115–120 (2009)Google Scholar
9. Andoa, M., Chabicovskyb, R., Haruta, M., Sens. Actuators, B, Chem. 76, 13–17 (2005)Google Scholar
10. Faughnan, B.W., Crandall, R.S., Heyman, P.M., RCA Rev. 36, 177–197 (1975)Google Scholar
11. Deb, S.K., Sol. Energy Mater. Sol. Cells 92, 245–258 (2008)Google Scholar
12. Deb, S.K., Sol. Energy Mater. Sol. Cells 25, 327–338 (1992)Google Scholar
13. Krasovec, U.O., Vuk, A.S., Orel, B., Electrochim Acta 46, 1921–1929 (2001)Google Scholar
14. Daniel, M.F., Desbat, B., Lassegues, J.C., J. Solid State Chem. 67, 235–247 (1987)Google Scholar
15. Xu, X.Q., Shen, H., Xiong, X.Y., Thin Solid Films 415, 290–295 (2002)Google Scholar
16. Shigesato, Y., Murayama, A., Kamimori, T. et al. ., Appl. Surf. Sci. 33–34, 804–811 (1988)Google Scholar
17. Yamaguchi, Y., Kineri, T., Fujimoto, M., Mae, H., Yasumori, A., Nishio, K., Key Eng. Mater. 485, 271–274 (2011)Google Scholar