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Gas Source MBE Growth and Characterization of TlInGaAs/InP DH Structures for Temperature-independent Wavelength LD Application

Published online by Cambridge University Press:  21 March 2011

Hajime Asahi ,
Hwe-Jae Lee ,
Akiko Mizobata ,
Kenta Konishi ,
Osamu Maeda  and
Kumiko Asami
Hajime Asahi
Affiliation:
The Institute of Scientific and Industrial Research, Osaka University 8–1, Mihogaoka, Ibaraki, Osaka 567–0047, Japan
Hwe-Jae Lee
Affiliation:
The Institute of Scientific and Industrial Research, Osaka University 8–1, Mihogaoka, Ibaraki, Osaka 567–0047, Japan
Akiko Mizobata
Affiliation:
The Institute of Scientific and Industrial Research, Osaka University 8–1, Mihogaoka, Ibaraki, Osaka 567–0047, Japan
Kenta Konishi
Affiliation:
The Institute of Scientific and Industrial Research, Osaka University 8–1, Mihogaoka, Ibaraki, Osaka 567–0047, Japan
Osamu Maeda
Affiliation:
The Institute of Scientific and Industrial Research, Osaka University 8–1, Mihogaoka, Ibaraki, Osaka 567–0047, Japan
Kumiko Asami
Affiliation:
The Institute of Scientific and Industrial Research, Osaka University 8–1, Mihogaoka, Ibaraki, Osaka 567–0047, Japan
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Abstract

TlInGaAs/InP double-hetero (DH) structures were grown on (100) InP substrates by gas source MBE. The photoluminescence (PL) peak energy variation with temperature decreased with increasing Tl composition. For the DH with a Tl composition of 13%, the PL peak energy varied only slightly with temperature (−0.03 meV/K). This value corresponds to a wavelength variation of 0.04 nm/K and is much smaller than that of the lasing wavelength of InGaAsP/InP distributed feedback laser diodes (0.1 nm/K). TlInGaAs/InP light emitting diodes with 6% Tl composition were fabricated and the small temperature variation of the electroluminescence peak energy (−0.09 meV/K) was observed at the wavelength around 1.58 μm. The results are promising to realize the temperature-independent wavelength laser diodes, which are important in the wavelength division multiplexing (WDM) optical fiber communication systems.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 692: Symposium H – Progress in Semiconductor Materials for Optoelectronic Applications , 2001 , H.9.27.1
Copyright
Copyright © Materials Research Society 2002

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