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Gas Phase Interactions between Triethylindium and Trimethylgallium

Published online by Cambridge University Press:  25 February 2011

P. D. Agnello
Affiliation:
Electrical, Computer and Systems Engineering Department, Rensselaer Polytechnic Institute, Troy, NY. 12180
S. K. Ghandhi
Affiliation:
Electrical, Computer and Systems Engineering Department, Rensselaer Polytechnic Institute, Troy, NY. 12180
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Abstract

A study of the room temperature gas-phase interactions between gallium and indium alkyls was undertaken using a mass spectrometer sampling system, mounted on a low pressure organometallic vapor phase epitaxial reactor. Mixtures of triethylindium with triethylgallium or trimethylgallium were investigated. Both combinations formed addition compounds; moreover, the triethylindium-trimethylgallium mixture underwent alkyl exchange. Both admixtures showed reduced reactivity towards arsine. A structure for the addition compound is proposed.

Type
Research Article
Copyright
Copyright © Materials Research Society 1989

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References

REFERENCES

1. Razeghi, M., Hirtz, J.P., Ziemelis, U.O., Delalande, C., Etienne, B. and Voos, M., Appl. Phys. Lett., 43, 585 (1983).Google Scholar
2. Manasevit, H.M. and Simpson, W.I., J. Electrochem. Soc., 120, 135 (1973).Google Scholar
3. Agnello, P.D. and Ghandhi, S.K., J. Electrochem. Soc., 135, 1530 (1988).CrossRefGoogle Scholar
4. Coates, G.E., Green, M.L.H., Powell, P. and Wade, K., “Principles of Organometallic Chemistry”, (Chapman & Hall, London, 1977), pp. 3840.Google Scholar
5. Maher, J.P. and Evans, D.F., Proc. Chem. Soc., 1961, 208.Google Scholar