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Gas Phase Decomposition of an Organometallic Chemical Vapor Deposition Precursor to Ain: [A1(CH3)2NH2]3

Published online by Cambridge University Press:  25 February 2011

Carmela C. Amato ,
John B. Hudson  and
Leonard V. Interrante
Carmela C. Amato
Affiliation:
Rensselaer Polytechnic Institute, Dept. of Chemistry, Troy, NY 12180
John B. Hudson
Affiliation:
Rensselaer Polytechnic Institute, Dept. of Materials Engineering, Troy, NY 12180
Leonard V. Interrante
Affiliation:
Rensselaer Polytechnic Institute, Dept. of Chemistry, Troy, NY 12180
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Abstract

A CVD reactor has been coupled to a molecular beam apparatus in order to study the gas phase decomposition of an organometallic precursor to AIN, tris-dimethylaluminum amide, [(CH3)2AINH2]3. The onset of decomposition occurs at a reactor temperature of 125°C. By 300°C, all mass spectral signals due to precursor have disappeared. With the addition of helium as a carrier gas in the CVD process, the temperature at which all precursor signals disappear is raised to 400°C. The evolution of methane accompanies the precursor decomposition. Mass spectra of the precursor and its deuterated analogue, [(CH3)2 AIND2]3, obtained between 50°C and 90°C, offer support for the existence of trimer-dimer-monomer equilibria in this temperature range.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 204: Symposium E – Chemical Perspectives of Microelectronic Materials II , 1990 , 135
Copyright
Copyright © Materials Research Society 1991

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References

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