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GaAs Surface Passivation by InGaP Thin Film
Published online by Cambridge University Press: 26 February 2011
Abstract
InGaP thin films are evaluated as wide-bandgap materials for GaAs surface passivation. A 200-Å InGaP thin film increases GaAs photoluminescence intensity 25-fold and enables Schottky barrier heights of more than 0.6 eV on n-type GaAs layers with a carrier concentration of 3×1018 /cm3. These effects persist after annealing at 800 °C for 10 min. InGaP thin films are thus suitable as surface passivation films for high-performance GaAs-MESFETs.
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