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Fundamental Materials-Issues involved in the Growth of GaN by Molecular Beam Epitaxy

Published online by Cambridge University Press:  21 February 2011

N. Newman ,
T.C Fu ,
X. Liu ,
Z. Liliental-Weber ,
M. Rubin ,
J. S. Chan ,
E. Jones ,
J. T. Ross ,
I. Tidswell  and
K. M. Yu
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N. Newman
Affiliation:
Lawrence Berkeley Laboratory, Berkeley, CA, 94720
T.C Fu
Affiliation:
Lawrence Berkeley Laboratory, Berkeley, CA, 94720
X. Liu
Affiliation:
Lawrence Berkeley Laboratory, Berkeley, CA, 94720
Z. Liliental-Weber
Affiliation:
Lawrence Berkeley Laboratory, Berkeley, CA, 94720
M. Rubin
Affiliation:
Lawrence Berkeley Laboratory, Berkeley, CA, 94720
J. S. Chan
Affiliation:
Lawrence Berkeley Laboratory, Berkeley, CA, 94720
E. Jones
Affiliation:
Lawrence Berkeley Laboratory, Berkeley, CA, 94720
J. T. Ross
Affiliation:
Lawrence Berkeley Laboratory, Berkeley, CA, 94720
I. Tidswell
Affiliation:
Lawrence Berkeley Laboratory, Berkeley, CA, 94720
K. M. Yu
Affiliation:
Lawrence Berkeley Laboratory, Berkeley, CA, 94720
N. Cheung
Affiliation:
Lawrence Berkeley Laboratory, Berkeley, CA, 94720
E. R. Weber
Affiliation:
Lawrence Berkeley Laboratory, Berkeley, CA, 94720
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Abstract

Gallium nitride is one of the most promising materials for ultraviolet and blue light-emitting diodes and lasers. Both Molecular Beam Epitaxy (MBE) and Metal-Organic Chemical Vapor Deposition (MOCVD) have recently made strong progress in fabricating high-quality epitaxial GaN thin films. In this paper, we review materials-related issues involved in MBE growth. We show that a strong understanding of the unique meta-stable growth process allows us to correctly predict the optimum conditions for epitaxial GaN growth. The resulting structural, electronic and optical properties of the GaN films are described in detail.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 339: Symposium D – Diamond, Silicon Carbide and Nitride Wide Bandgap Semiconductors , 1994 , 483
Copyright
Copyright © Materials Research Society 1994

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References

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