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Fullerene sensitized silicon for near to mid infrared light detection

Published online by Cambridge University Press:  17 April 2019

Gebhard J. Matt ,
Mateusz Bednorz ,
Thomas Fromherz ,
Saeid Zamiri ,
Christoph Lungenschmied ,
Niyazi Serdar Sariciftci  and
Günther Bauer
Gebhard J. Matt
Affiliation:
Institute for Semiconductor Physics, Johannes Kepler University, Linz, Austria
Mateusz Bednorz
Affiliation:
Institute for Semiconductor Physics, Johannes Kepler University, Linz, Austria
Thomas Fromherz
Affiliation:
Institute for Semiconductor Physics, Johannes Kepler University, Linz, Austria
Saeid Zamiri
Affiliation:
Christian Doppler Laboratory for Surface Optics, Johannes Kepler University, Linz, Austria
Christoph Lungenschmied
Affiliation:
Konarka Austria, Linz, Austria
Niyazi Serdar Sariciftci
Affiliation:
Linz Institute for Organic Solar Cells (LIOS), Johannes Kepler University, Linz, Austria
Günther Bauer
Affiliation:
Institute for Semiconductor Physics, Johannes Kepler University, Linz, Austria
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Abstract

We report on a novel light sensing scheme based on a silicon/fullerene-derivative hetero-junction that allows the realization of optoelectronic devices for the detection of near to mid infrared radiation. Despite the absent absorption of silicon and the fullerene-derivative for wavelengths beyond 1.1 µm and 0.72 µm, respectively, a hetero-junction of these materials absorbs and generates a photo-current due to absorption in the near to mid infrared. This photo-current is caused by an interfacial absorption mechanism [1].

Besides its scientific relevance, the simple fabrication process of the hetero-junction (e.g. the fullerene-derivative is deposited by spin-coating on Si) as well as its compatibility with the established and rather cheap CMOS technology makes the presented hybrid approach a promising candidate for widespread applications.

Keywords

infrared (IR) spectroscopysensorphotovoltaic
Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 1247: Symposium C – Solution Processing of Inorganic and Hybrid Materials for Electronics and Photonics , 2010 , 1247-C01-05
Copyright
Copyright © Materials Research Society 2010

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References

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